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Article: A new mathematical model for semiconductor-on-insulator structures

TitleA new mathematical model for semiconductor-on-insulator structures
Authors
Issue Date1990
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1990, v. 33 n. 4, p. 441-444 How to Cite?
AbstractA novel mathematical method is proposed to solve the two-dimensional Poisson's equation describing the potential distribution in semiconductor-on-insulator devices. Since an analytical solution method is used for the buried oxide or sapphire layer, mesh-points are not necessary for these insulator regions. This meansless computation ti me as compared to standard numerical methods.
Persistent Identifierhttp://hdl.handle.net/10722/154908
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:31:07Z-
dc.date.available2012-08-08T08:31:07Z-
dc.date.issued1990en_US
dc.identifier.citationSolid-State Electronics, 1990, v. 33 n. 4, p. 441-444en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154908-
dc.description.abstractA novel mathematical method is proposed to solve the two-dimensional Poisson's equation describing the potential distribution in semiconductor-on-insulator devices. Since an analytical solution method is used for the buried oxide or sapphire layer, mesh-points are not necessary for these insulator regions. This meansless computation ti me as compared to standard numerical methods.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.titleA new mathematical model for semiconductor-on-insulator structuresen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(90)90048-Jen_US
dc.identifier.scopuseid_2-s2.0-0025409267en_US
dc.identifier.volume33en_US
dc.identifier.issue4en_US
dc.identifier.spage441en_US
dc.identifier.epage444en_US
dc.identifier.isiWOS:A1990CY21400009-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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