File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Interdiffusion between Si substrates and YBaCuO films

TitleInterdiffusion between Si substrates and YBaCuO films
Authors
Issue Date1989
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physc
Citation
Physica C: Superconductivity And Its Applications, 1989, v. 162-164 PART 1, p. 637-638 How to Cite?
AbstractRapid thermal annealing has been used for fabrication of YBaCuO thin films from Cu/BaO/Y2O3 layered structures. The films were deposited on Si substrates by electron-beam evaporation. The interdiffusion at the film/substrate interface has been investigated using Auger depth profiling. With a metal barrier layer, the film showed the superconducting transition between 74-85 K. At anneal temperature above 980°C, Si was found to diffuse throughout the film and degrade the superconductivity of the films. © 1989.
Persistent Identifierhttp://hdl.handle.net/10722/154899
ISSN
2021 Impact Factor: 1.534
2020 SCImago Journal Rankings: 0.372

 

DC FieldValueLanguage
dc.contributor.authorMa, QYen_US
dc.contributor.authorWu, Xen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorChang, CAen_US
dc.date.accessioned2012-08-08T08:31:05Z-
dc.date.available2012-08-08T08:31:05Z-
dc.date.issued1989en_US
dc.identifier.citationPhysica C: Superconductivity And Its Applications, 1989, v. 162-164 PART 1, p. 637-638en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://hdl.handle.net/10722/154899-
dc.description.abstractRapid thermal annealing has been used for fabrication of YBaCuO thin films from Cu/BaO/Y2O3 layered structures. The films were deposited on Si substrates by electron-beam evaporation. The interdiffusion at the film/substrate interface has been investigated using Auger depth profiling. With a metal barrier layer, the film showed the superconducting transition between 74-85 K. At anneal temperature above 980°C, Si was found to diffuse throughout the film and degrade the superconductivity of the films. © 1989.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physcen_US
dc.relation.ispartofPhysica C: Superconductivity and its applicationsen_US
dc.titleInterdiffusion between Si substrates and YBaCuO filmsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0024921778en_US
dc.identifier.volume162-164en_US
dc.identifier.issuePART 1en_US
dc.identifier.spage637en_US
dc.identifier.epage638en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridChang, CA=7407042938en_US
dc.identifier.issnl0921-4534-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats