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Article: Injection-induced bandgap narrowing and its effects on the low-temperature operation of silicon bipolar transistors

TitleInjection-induced bandgap narrowing and its effects on the low-temperature operation of silicon bipolar transistors
Authors
Issue Date1989
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1989, v. 36 n. 11 pt 1, p. 2576-2586 How to Cite?
AbstractThe authors present evidence that injection-induced bandgap narrowing plays an important role in determining the low-temperature properties of silicon bipolar transistors. This phenomenon occurs when large concentrations of minority-carrier charge are injected into the quasi-neutral base region of the device under high-current conditions. A significant enhancement in the low-temperature transistor current gain in the high-current regime is produced that is unaccounted for in conventional device theory. Comparison of theoretical calculations as well as phenomenological modeling results to measured data supports the authors' claims. The analysis suggests that an understanding of injection-induced bandgap narrowing is required for accurate modeling of bipolar transistors, particularly when they are used in low-temperature applications.
Persistent Identifierhttp://hdl.handle.net/10722/154897
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCressler, John Den_US
dc.contributor.authorTang, Denny DuanLeeen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:31:04Z-
dc.date.available2012-08-08T08:31:04Z-
dc.date.issued1989en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1989, v. 36 n. 11 pt 1, p. 2576-2586en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154897-
dc.description.abstractThe authors present evidence that injection-induced bandgap narrowing plays an important role in determining the low-temperature properties of silicon bipolar transistors. This phenomenon occurs when large concentrations of minority-carrier charge are injected into the quasi-neutral base region of the device under high-current conditions. A significant enhancement in the low-temperature transistor current gain in the high-current regime is produced that is unaccounted for in conventional device theory. Comparison of theoretical calculations as well as phenomenological modeling results to measured data supports the authors' claims. The analysis suggests that an understanding of injection-induced bandgap narrowing is required for accurate modeling of bipolar transistors, particularly when they are used in low-temperature applications.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleInjection-induced bandgap narrowing and its effects on the low-temperature operation of silicon bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.43682en_US
dc.identifier.scopuseid_2-s2.0-0024769919en_US
dc.identifier.volume36en_US
dc.identifier.issue11 pt 1en_US
dc.identifier.spage2576en_US
dc.identifier.epage2586en_US
dc.identifier.isiWOS:A1989AW89000027-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridCressler, John D=7006864898en_US
dc.identifier.scopusauthoridTang, Denny DuanLee=7401987074en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US

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