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Article: On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors

TitleOn the low-temperature static and dynamic properties of high-performance silicon bipolar transistors
Authors
Issue Date1989
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1989, v. 36 n. 8, p. 1489-1502 How to Cite?
AbstractIn a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to have near-ideal characteristics at low temperatures with β as high as 80 at 77 K. Detailed calculations indicate that the conventional theory of the temperature dependence of β does not match the data. The discrepancy can be removed if it is assumed that a phenomenological thermal barrier to hole injection is present. Emitter-coupled logic (ECL) ring oscillators are functional at 85 K with no degradation in speed until about 165 K when compared to 358 K (85°C). Calculations using a delay figure of merit indicate that fT, Rb, and Cc are the delay components most affected by low-temperature operation. The feasibility of reduced logic swing operation of bipolar circuits at low temperatures is examined. It is found that successful ECL circuit operation at reduced logic swings is possible provided emitter resistance is kept small and can be used to enhance low-temperature power-delay performance. These data suggest that conventionally designed high-performance bipolar devices are suitable for the low-temperature environment.
Persistent Identifierhttp://hdl.handle.net/10722/154892
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCressler, John Den_US
dc.contributor.authorTang, Denny Den_US
dc.contributor.authorJenkins, Keith Aen_US
dc.contributor.authorLi, GuannPyngen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:31:03Z-
dc.date.available2012-08-08T08:31:03Z-
dc.date.issued1989en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1989, v. 36 n. 8, p. 1489-1502en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154892-
dc.description.abstractIn a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to have near-ideal characteristics at low temperatures with β as high as 80 at 77 K. Detailed calculations indicate that the conventional theory of the temperature dependence of β does not match the data. The discrepancy can be removed if it is assumed that a phenomenological thermal barrier to hole injection is present. Emitter-coupled logic (ECL) ring oscillators are functional at 85 K with no degradation in speed until about 165 K when compared to 358 K (85°C). Calculations using a delay figure of merit indicate that fT, Rb, and Cc are the delay components most affected by low-temperature operation. The feasibility of reduced logic swing operation of bipolar circuits at low temperatures is examined. It is found that successful ECL circuit operation at reduced logic swings is possible provided emitter resistance is kept small and can be used to enhance low-temperature power-delay performance. These data suggest that conventionally designed high-performance bipolar devices are suitable for the low-temperature environment.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleOn the low-temperature static and dynamic properties of high-performance silicon bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.30962en_US
dc.identifier.scopuseid_2-s2.0-0024717449en_US
dc.identifier.volume36en_US
dc.identifier.issue8en_US
dc.identifier.spage1489en_US
dc.identifier.epage1502en_US
dc.identifier.isiWOS:A1989AF21600012-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridCressler, John D=7006864898en_US
dc.identifier.scopusauthoridTang, Denny D=7401987074en_US
dc.identifier.scopusauthoridJenkins, Keith A=21134607100en_US
dc.identifier.scopusauthoridLi, GuannPyng=8605077700en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US

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