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Article: A general model for minority carrier transport in polysilicon emitters
Title | A general model for minority carrier transport in polysilicon emitters |
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Authors | |
Issue Date | 1989 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse |
Citation | Solid State Electronics, 1989, v. 32 n. 4, p. 323-327 How to Cite? |
Abstract | A model for the base current of the polysilicon emitter bipolar transistor is presented. An analytical expression for the base current is derived, demonstrating the individual contributions of the interfacial potential barrier and the transport through the polysilicon layer. This model represents an improvement over the previous models by predicting the variation with polysilicon thickness as well as the nonlinear temperature dependence of the base current. © 1989. |
Persistent Identifier | http://hdl.handle.net/10722/154889 |
ISSN | 2021 Impact Factor: 1.916 2020 SCImago Journal Rankings: 0.457 |
DC Field | Value | Language |
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dc.contributor.author | Jalali, B | en_US |
dc.contributor.author | Yang, ES | en_US |
dc.date.accessioned | 2012-08-08T08:31:03Z | - |
dc.date.available | 2012-08-08T08:31:03Z | - |
dc.date.issued | 1989 | en_US |
dc.identifier.citation | Solid State Electronics, 1989, v. 32 n. 4, p. 323-327 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/154889 | - |
dc.description.abstract | A model for the base current of the polysilicon emitter bipolar transistor is presented. An analytical expression for the base current is derived, demonstrating the individual contributions of the interfacial potential barrier and the transport through the polysilicon layer. This model represents an improvement over the previous models by predicting the variation with polysilicon thickness as well as the nonlinear temperature dependence of the base current. © 1989. | en_US |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse | en_US |
dc.relation.ispartof | Solid State Electronics | en_US |
dc.title | A general model for minority carrier transport in polysilicon emitters | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0024649476 | en_US |
dc.identifier.volume | 32 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.spage | 323 | en_US |
dc.identifier.epage | 327 | en_US |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.scopusauthorid | Jalali, B=7004889917 | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.issnl | 0038-1101 | - |