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Article: Charge storage in the polysilicon emitter

TitleCharge storage in the polysilicon emitter
Authors
Issue Date1988
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1988, v. 35 n. 12, p. 2439-2440 How to Cite?
AbstractThe effect of excess charge storage on the dynamic behavior of the polysilicon emitter has been studied. The excess charge is a manifestation of minority-carrier confinement, resulting in a lower base current and therefore improved gain. The diode reverse recovery technique was used in the study. This technique is based on the fact that the initial phase during the reverse current transient of a diode is a function of the excess minority carriers stored inside the diode. The devices were fabricated using n-p+ epitaxial wafers and the contact to the n-side was made either by diffusion from n + (As) polysilicon or by direct implantation into single-crystal silicon. The structures therefore simulate the emitter-base junction of an n-p-n bipolar transistor with the base more heavily doped than the emitter. The storage phenomenon in the polysilicon contact diodes has been modeled by solving the time-dependent continuity equation. A closed-form analytical solution has been obtained, allowing the first extraction of the surface recombination velocity of polysilicon contact from the transient data.
Persistent Identifierhttp://hdl.handle.net/10722/154879
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorJalali, Ben_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:01Z-
dc.date.available2012-08-08T08:31:01Z-
dc.date.issued1988en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1988, v. 35 n. 12, p. 2439-2440en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154879-
dc.description.abstractThe effect of excess charge storage on the dynamic behavior of the polysilicon emitter has been studied. The excess charge is a manifestation of minority-carrier confinement, resulting in a lower base current and therefore improved gain. The diode reverse recovery technique was used in the study. This technique is based on the fact that the initial phase during the reverse current transient of a diode is a function of the excess minority carriers stored inside the diode. The devices were fabricated using n-p+ epitaxial wafers and the contact to the n-side was made either by diffusion from n + (As) polysilicon or by direct implantation into single-crystal silicon. The structures therefore simulate the emitter-base junction of an n-p-n bipolar transistor with the base more heavily doped than the emitter. The storage phenomenon in the polysilicon contact diodes has been modeled by solving the time-dependent continuity equation. A closed-form analytical solution has been obtained, allowing the first extraction of the surface recombination velocity of polysilicon contact from the transient data.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleCharge storage in the polysilicon emitteren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0024124157en_US
dc.identifier.volume35en_US
dc.identifier.issue12en_US
dc.identifier.spage2439en_US
dc.identifier.epage2440en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJalali, B=7004889917en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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