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Article: Self-aligned bipolar transistor using double thermal oxidation

TitleSelf-aligned bipolar transistor using double thermal oxidation
Authors
Issue Date1988
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1988, v. 24 n. 21, p. 1343-1345 How to Cite?
AbstractA novel process is proposed to self-align the emitter and extrinsic base in a bipolar transistor. The process involves the use of double thermal oxidation and RIE to create a steep oxide emitter sidewall. The method avoids the potential problems of LPCVD oxide and can remove the residual poly on the extrinsic base, both of which lead to base-emitter shorts. It also eliminates the need for growth of adhesion oxide and annealing of LPCVD oxide. The devices thus fabricated exhibit a high current gain of 130 and high punch-through voltage of 20 V.
Persistent Identifierhttp://hdl.handle.net/10722/154878
ISSN
2015 Impact Factor: 0.854
2015 SCImago Journal Rankings: 0.549

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorKassam, Aen_US
dc.contributor.authorSalama, CATen_US
dc.date.accessioned2012-08-08T08:31:00Z-
dc.date.available2012-08-08T08:31:00Z-
dc.date.issued1988en_US
dc.identifier.citationElectronics Letters, 1988, v. 24 n. 21, p. 1343-1345en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/154878-
dc.description.abstractA novel process is proposed to self-align the emitter and extrinsic base in a bipolar transistor. The process involves the use of double thermal oxidation and RIE to create a steep oxide emitter sidewall. The method avoids the potential problems of LPCVD oxide and can remove the residual poly on the extrinsic base, both of which lead to base-emitter shorts. It also eliminates the need for growth of adhesion oxide and annealing of LPCVD oxide. The devices thus fabricated exhibit a high current gain of 130 and high punch-through voltage of 20 V.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.titleSelf-aligned bipolar transistor using double thermal oxidationen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0024090050en_US
dc.identifier.volume24en_US
dc.identifier.issue21en_US
dc.identifier.spage1343en_US
dc.identifier.epage1345en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridKassam, A=36941939400en_US
dc.identifier.scopusauthoridSalama, CAT=7004594704en_US

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