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Article: Tunneling in a metal-semiconductor-semiconductor thin-film diode

TitleTunneling in a metal-semiconductor-semiconductor thin-film diode
Authors
Issue Date1986
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1986, v. 29 n. 3, p. 355-357 How to Cite?
AbstractBy incorporation of a thin layer of near intrinsic semiconductor, one can change a metal-semiconductor ohmic contact into a retifying junction. This concept is demonstrated by inserting an amorphous silicon film of less than 40 A between aluminum and silicon. The resulting diode's forward current is found to be controlled by majority carrier tunneling, and its reverse current is governed by minority carrier diffusion. From experimental data of I-V and C-V measurements, we find a flat-band condition at zero bias and deduce a tunneling barrier height of 0.67 eV at room temperature. The energy band diagram is presented to illustrate the operation principle of the tunnel diode. © 1986.
Persistent Identifierhttp://hdl.handle.net/10722/154854
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorYang, DKen_US
dc.contributor.authorHua, QHen_US
dc.contributor.authorYang, GSen_US
dc.date.accessioned2012-08-08T08:30:56Z-
dc.date.available2012-08-08T08:30:56Z-
dc.date.issued1986en_US
dc.identifier.citationSolid State Electronics, 1986, v. 29 n. 3, p. 355-357en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154854-
dc.description.abstractBy incorporation of a thin layer of near intrinsic semiconductor, one can change a metal-semiconductor ohmic contact into a retifying junction. This concept is demonstrated by inserting an amorphous silicon film of less than 40 A between aluminum and silicon. The resulting diode's forward current is found to be controlled by majority carrier tunneling, and its reverse current is governed by minority carrier diffusion. From experimental data of I-V and C-V measurements, we find a flat-band condition at zero bias and deduce a tunneling barrier height of 0.67 eV at room temperature. The energy band diagram is presented to illustrate the operation principle of the tunnel diode. © 1986.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleTunneling in a metal-semiconductor-semiconductor thin-film diodeen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0022679215en_US
dc.identifier.volume29en_US
dc.identifier.issue3en_US
dc.identifier.spage355en_US
dc.identifier.epage357en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridYang, DK=7404800737en_US
dc.identifier.scopusauthoridHua, QH=7006230819en_US
dc.identifier.scopusauthoridYang, GS=23023865100en_US

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