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Article: NOVEL NUMERICAL MODEL FOR SOI DEVICES.

TitleNOVEL NUMERICAL MODEL FOR SOI DEVICES.
Authors
Lai, PTCheng, YC
Issue Date1985
Citation
Electron Device Letters, 1985, v. EDL-6 n. 9, p. 459-461 How to Cite?
AbstractThe Poisson's equation governing the potential distribution of semiconductor-on-insulator structures is solved by a novel numerical technique. In this efficient method, no grid-points need to be assigned for all the insulator regions such as the surface oxide layer, buried oxide layer, and sapphire layer.
Persistent Identifierhttp://hdl.handle.net/10722/154848
ISSN
0193-8576
ISI Accession Number ID
WOS:A1985AQG0500008

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:55Z-
dc.date.available2012-08-08T08:30:55Z-
dc.date.issued1985en_US
dc.identifier.citationElectron Device Letters, 1985, v. EDL-6 n. 9, p. 459-461en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154848-
dc.description.abstractThe Poisson's equation governing the potential distribution of semiconductor-on-insulator structures is solved by a novel numerical technique. In this efficient method, no grid-points need to be assigned for all the insulator regions such as the surface oxide layer, buried oxide layer, and sapphire layer.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleNOVEL NUMERICAL MODEL FOR SOI DEVICES.en_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0022118880en_US
dc.identifier.volumeEDL-6en_US
dc.identifier.issue9en_US
dc.identifier.spage459en_US
dc.identifier.epage461en_US
dc.identifier.isiWOS:A1985AQG0500008-
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US
dc.identifier.issnl0193-8576-

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