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Article: Comparison of threshold modulation in narrow MOSFETs with different isolation structures

TitleComparison of threshold modulation in narrow MOSFETs with different isolation structures
Authors
Lai, PTCheng, YC
Issue Date1985
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1985, v. 28 n. 6, p. 551-554 How to Cite?
DOI: http://dx.doi.org/10.1016/0038-1101(85)90124-8
AbstractThe threshold shifts of narrow MOSFETs with different oxide structures are calculated explicitly using numerical means. It is found that the semirecessed device with vertical-field oxide step and vertical side wall appears to be a more suitable candidate for very-large-scale integration (VLSI) if the characteristic of threshold change vs gate width is taken into consideration.
Persistent Identifierhttp://hdl.handle.net/10722/154847
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:A1985ALU3400003

 

DC FieldValueLanguage
dc.contributor.authorLai, PT-
dc.contributor.authorCheng, YC-
dc.date.accessioned2012-08-08T08:30:55Z-
dc.date.available2012-08-08T08:30:55Z-
dc.date.issued1985-
dc.identifier.citationSolid-State Electronics, 1985, v. 28 n. 6, p. 551-554-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10722/154847-
dc.description.abstractThe threshold shifts of narrow MOSFETs with different oxide structures are calculated explicitly using numerical means. It is found that the semirecessed device with vertical-field oxide step and vertical side wall appears to be a more suitable candidate for very-large-scale integration (VLSI) if the characteristic of threshold change vs gate width is taken into consideration.-
dc.languageeng-
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse-
dc.relation.ispartofSolid-State Electronics-
dc.titleComparison of threshold modulation in narrow MOSFETs with different isolation structures-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(85)90124-8-
dc.identifier.scopuseid_2-s2.0-0022083704en_US
dc.identifier.hkuros241280-
dc.identifier.volume28-
dc.identifier.issue6-
dc.identifier.spage551-
dc.identifier.epage554-
dc.identifier.isiWOS:A1985ALU3400003-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0038-1101-

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