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Article: Comparison of threshold modulation in narrow MOSFETs with different isolation structures

TitleComparison of threshold modulation in narrow MOSFETs with different isolation structures
Authors
Issue Date1985
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1985, v. 28 n. 6, p. 551-554 How to Cite?
AbstractThe threshold shifts of narrow MOSFETs with different oxide structures are calculated explicitly using numerical means. It is found that the semirecessed device with vertical-field oxide step and vertical side wall appears to be a more suitable candidate for very-large-scale integration (VLSI) if the characteristic of threshold change vs gate width is taken into consideration. © 1985.
Persistent Identifierhttp://hdl.handle.net/10722/154847
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:55Z-
dc.date.available2012-08-08T08:30:55Z-
dc.date.issued1985en_US
dc.identifier.citationSolid State Electronics, 1985, v. 28 n. 6, p. 551-554en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154847-
dc.description.abstractThe threshold shifts of narrow MOSFETs with different oxide structures are calculated explicitly using numerical means. It is found that the semirecessed device with vertical-field oxide step and vertical side wall appears to be a more suitable candidate for very-large-scale integration (VLSI) if the characteristic of threshold change vs gate width is taken into consideration. © 1985.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleComparison of threshold modulation in narrow MOSFETs with different isolation structuresen_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0022083704en_US
dc.identifier.hkuros241280-
dc.identifier.volume28en_US
dc.identifier.issue6en_US
dc.identifier.spage551en_US
dc.identifier.epage554en_US
dc.publisher.placeUnited Kingdomen_US

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