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Article: Invariant imbedding in semiconductor device simulation

TitleInvariant imbedding in semiconductor device simulation
Authors
Issue Date1985
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1985, v. 28 n. 5, p. 435-442 How to Cite?
AbstractA general, fail-safe and fool-proof numerical algorithm called invariant imbedding is used to successfully solve both the Poisson equation and the continuity equations for two-dimensional (2-D) problems. This direct method avoids the convergence problem commonly encountered in iterative methods, and is computationally more efficient than the classical Gaussian elimination method especially when the insulator occupies a large portion of the semiconductor device under simulation, and/or more accurate treatments are made for the interfacial region. © 1985.
Persistent Identifierhttp://hdl.handle.net/10722/154846
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:54Z-
dc.date.available2012-08-08T08:30:54Z-
dc.date.issued1985en_US
dc.identifier.citationSolid State Electronics, 1985, v. 28 n. 5, p. 435-442en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154846-
dc.description.abstractA general, fail-safe and fool-proof numerical algorithm called invariant imbedding is used to successfully solve both the Poisson equation and the continuity equations for two-dimensional (2-D) problems. This direct method avoids the convergence problem commonly encountered in iterative methods, and is computationally more efficient than the classical Gaussian elimination method especially when the insulator occupies a large portion of the semiconductor device under simulation, and/or more accurate treatments are made for the interfacial region. © 1985.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleInvariant imbedding in semiconductor device simulationen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0022060753en_US
dc.identifier.volume28en_US
dc.identifier.issue5en_US
dc.identifier.spage435en_US
dc.identifier.epage442en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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