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Article: REDUCTION OF PROBLEM SIZE FOR THE POISSON SOLVER IN DEVICE SIMULATION.

TitleREDUCTION OF PROBLEM SIZE FOR THE POISSON SOLVER IN DEVICE SIMULATION.
Authors
Issue Date1985
Citation
Electron Device Letters, 1985, v. EDL-6 n. 1, p. 6-7 How to Cite?
AbstractA novel solution technique for the Poisson equation is demonstrated by employing a mixed method, i. e. , direct algorithm for part or all of the insulator region and iterative method for the remaining portion of a device structure. It is shown that the present approach compares favorably with the corresponding iterative method especially for devices with a larger proportion of insulators.
Persistent Identifierhttp://hdl.handle.net/10722/154843
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:54Z-
dc.date.available2012-08-08T08:30:54Z-
dc.date.issued1985en_US
dc.identifier.citationElectron Device Letters, 1985, v. EDL-6 n. 1, p. 6-7en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154843-
dc.description.abstractA novel solution technique for the Poisson equation is demonstrated by employing a mixed method, i. e. , direct algorithm for part or all of the insulator region and iterative method for the remaining portion of a device structure. It is shown that the present approach compares favorably with the corresponding iterative method especially for devices with a larger proportion of insulators.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleREDUCTION OF PROBLEM SIZE FOR THE POISSON SOLVER IN DEVICE SIMULATION.en_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0021886727en_US
dc.identifier.volumeEDL-6en_US
dc.identifier.issue1en_US
dc.identifier.spage6en_US
dc.identifier.epage7en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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