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Article: Fabrication of MIS-Schottky diodes with thermal nitroxide film

TitleFabrication of MIS-Schottky diodes with thermal nitroxide film
Authors
Issue Date1983
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/matlet
Citation
Materials Letters, 1983, v. 2 n. 2, p. 147-149 How to Cite?
AbstractWe report a thermal nitridation process which is used to produce nitroxide films ranging between 15 and 50 Å in thickness. Fabricated MIS-Schottky barrier diodes with various turn-on voltages show an improvement in breakdown voltage. © 1983.
Persistent Identifierhttp://hdl.handle.net/10722/154824
ISSN
2015 Impact Factor: 2.437
2015 SCImago Journal Rankings: 0.807

 

DC FieldValueLanguage
dc.contributor.authorHua, QHen_US
dc.contributor.authorYang, DKen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:49Z-
dc.date.available2012-08-08T08:30:49Z-
dc.date.issued1983en_US
dc.identifier.citationMaterials Letters, 1983, v. 2 n. 2, p. 147-149en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/154824-
dc.description.abstractWe report a thermal nitridation process which is used to produce nitroxide films ranging between 15 and 50 Å in thickness. Fabricated MIS-Schottky barrier diodes with various turn-on voltages show an improvement in breakdown voltage. © 1983.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/matleten_US
dc.relation.ispartofMaterials Lettersen_US
dc.titleFabrication of MIS-Schottky diodes with thermal nitroxide filmen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0020832616en_US
dc.identifier.volume2en_US
dc.identifier.issue2en_US
dc.identifier.spage147en_US
dc.identifier.epage149en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridHua, QH=7006230819en_US
dc.identifier.scopusauthoridYang, DK=7404800737en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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