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Article: Diffusivity and growth rate of silicon in solid-phase epitaxy with an aluminum medium

TitleDiffusivity and growth rate of silicon in solid-phase epitaxy with an aluminum medium
Authors
Qingheng, HYang, ESIzmirliyan, H
Issue Date1982
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1982, v. 25 n. 12, p. 1187-1188 How to Cite?
AbstractUsing the classical diffusion equation for an amorphous (a)-SiAlSi sandwich structure, we have measured the diffusivity of a-Si in Al between 470-570°C and have derived the mass-transfer coefficient under the equilibrium solid-phase epitaxial growth condition. Our data can be used to explain recent results of junction formation by solid-phase epitaxy. The activation energy of this process is found to be 0.80 eV. © 1982.
Persistent Identifierhttp://hdl.handle.net/10722/154815
ISSN
0038-1101
2021 Impact Factor: 1.916
2020 SCImago Journal Rankings: 0.457

 

DC FieldValueLanguage
dc.contributor.authorQingheng, Hen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorIzmirliyan, Hen_US
dc.date.accessioned2012-08-08T08:30:47Z-
dc.date.available2012-08-08T08:30:47Z-
dc.date.issued1982en_US
dc.identifier.citationSolid State Electronics, 1982, v. 25 n. 12, p. 1187-1188en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154815-
dc.description.abstractUsing the classical diffusion equation for an amorphous (a)-SiAlSi sandwich structure, we have measured the diffusivity of a-Si in Al between 470-570°C and have derived the mass-transfer coefficient under the equilibrium solid-phase epitaxial growth condition. Our data can be used to explain recent results of junction formation by solid-phase epitaxy. The activation energy of this process is found to be 0.80 eV. © 1982.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleDiffusivity and growth rate of silicon in solid-phase epitaxy with an aluminum mediumen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0020274047en_US
dc.identifier.volume25en_US
dc.identifier.issue12en_US
dc.identifier.spage1187en_US
dc.identifier.epage1188en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridQingheng, H=24523209600en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridIzmirliyan, H=6504415483en_US
dc.identifier.issnl0038-1101-

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