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Article: Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements

TitleDetermination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements
Authors
Issue Date1982
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1982, v. 25 n. 5, p. 417-422 How to Cite?
AbstractThe grain boundary recombination velocity of polycrystalline Si is separated from bulk effects and its value is determined with practically no assumption of numerical values for any parameter other than the minority carrier diffusion coefficient. The method used utilizes photoconductance measurements taken by the scanning laser spot technique. It is found that, for the illumination levels used, there is a transition from low level to high-level injection of minority carriers, and this transition is used to estimate the quasi-Fermi level separation. The recombination velocity S, ranging in value from 5000 to 17000 cm/sec, is thus presented both as a function of the illumination level as well as of the quasi-Fermi level separation ΔE f. It is found that S increases monotonically with illumination and does not saturate, even at the high light concentrations used. © 1982.
Persistent Identifierhttp://hdl.handle.net/10722/154813
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorPanayotatos, Pen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorHwang, Wen_US
dc.date.accessioned2012-08-08T08:30:46Z-
dc.date.available2012-08-08T08:30:46Z-
dc.date.issued1982en_US
dc.identifier.citationSolid State Electronics, 1982, v. 25 n. 5, p. 417-422en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154813-
dc.description.abstractThe grain boundary recombination velocity of polycrystalline Si is separated from bulk effects and its value is determined with practically no assumption of numerical values for any parameter other than the minority carrier diffusion coefficient. The method used utilizes photoconductance measurements taken by the scanning laser spot technique. It is found that, for the illumination levels used, there is a transition from low level to high-level injection of minority carriers, and this transition is used to estimate the quasi-Fermi level separation. The recombination velocity S, ranging in value from 5000 to 17000 cm/sec, is thus presented both as a function of the illumination level as well as of the quasi-Fermi level separation ΔE f. It is found that S increases monotonically with illumination and does not saturate, even at the high light concentrations used. © 1982.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleDetermination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurementsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0020128751en_US
dc.identifier.volume25en_US
dc.identifier.issue5en_US
dc.identifier.spage417en_US
dc.identifier.epage422en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridPanayotatos, P=7004244750en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US

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