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Article: MAJORITY CARRIER CURRENT CHARACTERISTICS IN LARGE-GRAIN POLYCRYSTALLINE-SILICON-SCHOTTKY-BARRIER SOLAR CELLS.

TitleMAJORITY CARRIER CURRENT CHARACTERISTICS IN LARGE-GRAIN POLYCRYSTALLINE-SILICON-SCHOTTKY-BARRIER SOLAR CELLS.
Authors
Yang, ESPoon, EKHwang, WWu, CMCard, HC
Issue Date1981
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1981, v. ED-28 n. 10, p. 1131-1135 How to Cite?
AbstractA theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E//0. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.
Persistent Identifierhttp://hdl.handle.net/10722/154811
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:A1981MJ38500003

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorPoon, EKen_US
dc.contributor.authorHwang, Wen_US
dc.contributor.authorWu, CMen_US
dc.contributor.authorCard, HCen_US
dc.date.accessioned2012-08-08T08:30:46Z-
dc.date.available2012-08-08T08:30:46Z-
dc.date.issued1981en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1981, v. ED-28 n. 10, p. 1131-1135en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154811-
dc.description.abstractA theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E//0. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleMAJORITY CARRIER CURRENT CHARACTERISTICS IN LARGE-GRAIN POLYCRYSTALLINE-SILICON-SCHOTTKY-BARRIER SOLAR CELLS.en_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0019621142en_US
dc.identifier.volumeED-28en_US
dc.identifier.issue10en_US
dc.identifier.spage1131en_US
dc.identifier.epage1135en_US
dc.identifier.isiWOS:A1981MJ38500003-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridPoon, EK=7003615942en_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US
dc.identifier.scopusauthoridWu, CM=7501663415en_US
dc.identifier.scopusauthoridCard, HC=7004748017en_US
dc.identifier.issnl0018-9383-

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