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Article: IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

TitleIMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.
Authors
Issue Date1980
Citation
Technical Digest - International Electron Devices Meeting, 1980, p. 209-211 How to Cite?
AbstractA theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.
Persistent Identifierhttp://hdl.handle.net/10722/154804
ISSN

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorPoon, Een_US
dc.contributor.authorWu, CMen_US
dc.contributor.authorCard, HCen_US
dc.contributor.authorHwang, Wen_US
dc.date.accessioned2012-08-08T08:30:44Z-
dc.date.available2012-08-08T08:30:44Z-
dc.date.issued1980en_US
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, 1980, p. 209-211en_US
dc.identifier.issn0163-1918en_US
dc.identifier.urihttp://hdl.handle.net/10722/154804-
dc.description.abstractA theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.en_US
dc.languageengen_US
dc.relation.ispartofTechnical Digest - International Electron Devices Meetingen_US
dc.titleIMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.en_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0019290451en_US
dc.identifier.spage209en_US
dc.identifier.epage211en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridPoon, E=7003615942en_US
dc.identifier.scopusauthoridWu, CM=7501663415en_US
dc.identifier.scopusauthoridCard, HC=7004748017en_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US

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