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Article: GRAIN BOUNDARY EFFECTS ON THE ELECTRICAL BEHAVIOR OF Al-POLY-Si SCHOTTKY-BARRIER SOLAR CELLS.
| Title | GRAIN BOUNDARY EFFECTS ON THE ELECTRICAL BEHAVIOR OF Al-POLY-Si SCHOTTKY-BARRIER SOLAR CELLS. |
|---|---|
| Authors | |
| Issue Date | 1980 |
| Publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
| Citation | Ieee Transactions On Electron Devices, 1980, v. ED-27 n. 4, p. 687-692 How to Cite? |
| Abstract | Schottky-barrier diodes using aluminum on p-type poly-crystalline silicon have been fabricated. The contrast of the orientation of neighboring grains is observed after chemical etching of the surface. Comparing the surface morphology of the substrate with the electronic behavior of the Schottky diode, one can identify the influence of grain boundaries. It is found that the low-angle boundary has little effect on the I-V characteristics since near ideal Schottky I-V curves are obtained. |
| Persistent Identifier | http://hdl.handle.net/10722/154802 |
| ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wu, ChiMing M | en_US |
| dc.contributor.author | Yang, Edward S | en_US |
| dc.contributor.author | Hwang, W | en_US |
| dc.contributor.author | Card, Howard C | en_US |
| dc.date.accessioned | 2012-08-08T08:30:44Z | - |
| dc.date.available | 2012-08-08T08:30:44Z | - |
| dc.date.issued | 1980 | en_US |
| dc.identifier.citation | Ieee Transactions On Electron Devices, 1980, v. ED-27 n. 4, p. 687-692 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/154802 | - |
| dc.description.abstract | Schottky-barrier diodes using aluminum on p-type poly-crystalline silicon have been fabricated. The contrast of the orientation of neighboring grains is observed after chemical etching of the surface. Comparing the surface morphology of the substrate with the electronic behavior of the Schottky diode, one can identify the influence of grain boundaries. It is found that the low-angle boundary has little effect on the I-V characteristics since near ideal Schottky I-V curves are obtained. | en_US |
| dc.language | eng | en_US |
| dc.publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | en_US |
| dc.relation.ispartof | IEEE Transactions on Electron Devices | en_US |
| dc.title | GRAIN BOUNDARY EFFECTS ON THE ELECTRICAL BEHAVIOR OF Al-POLY-Si SCHOTTKY-BARRIER SOLAR CELLS. | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Yang, Edward S:esyang@hkueee.hku.hk | en_US |
| dc.identifier.authority | Yang, Edward S=rp00199 | en_US |
| dc.description.nature | link_to_subscribed_fulltext | en_US |
| dc.identifier.scopus | eid_2-s2.0-0019007106 | en_US |
| dc.identifier.volume | ED-27 | en_US |
| dc.identifier.issue | 4 | en_US |
| dc.identifier.spage | 687 | en_US |
| dc.identifier.epage | 692 | en_US |
| dc.identifier.isi | WOS:A1980JS50100011 | - |
| dc.publisher.place | United States | en_US |
| dc.identifier.scopusauthorid | Wu, ChiMing M=7501663415 | en_US |
| dc.identifier.scopusauthorid | Yang, Edward S=7202021229 | en_US |
| dc.identifier.scopusauthorid | Hwang, W=25630510100 | en_US |
| dc.identifier.scopusauthorid | Card, Howard C=7004748017 | en_US |
| dc.identifier.issnl | 0018-9383 | - |