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Article: CURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.

TitleCURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.
Authors
Issue Date1980
Citation
Conference Record Of The Ieee Photovoltaic Specialists Conference, 1980, p. 404-409 How to Cite?
AbstractA description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.
Persistent Identifierhttp://hdl.handle.net/10722/154799
ISSN

 

DC FieldValueLanguage
dc.contributor.authorHwang, Wen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorCard, HCen_US
dc.contributor.authorWu, CMen_US
dc.date.accessioned2012-08-08T08:30:43Z-
dc.date.available2012-08-08T08:30:43Z-
dc.date.issued1980en_US
dc.identifier.citationConference Record Of The Ieee Photovoltaic Specialists Conference, 1980, p. 404-409en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/10722/154799-
dc.description.abstractA description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.en_US
dc.languageengen_US
dc.relation.ispartofConference Record of the IEEE Photovoltaic Specialists Conferenceen_US
dc.titleCURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.en_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0018914786en_US
dc.identifier.spage404en_US
dc.identifier.epage409en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridCard, HC=7004748017en_US
dc.identifier.scopusauthoridWu, CM=7501663415en_US

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