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Article: Carrier transport across heterojunction interfaces

TitleCarrier transport across heterojunction interfaces
Authors
Issue Date1979
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1979, v. 22 n. 3, p. 241-248 How to Cite?
AbstractA general theory is presented to describe the carrier transport across heterojunction interfaces. In matching the boundary conditions at the interface, the conservation of total energy and perpendicular momentum is assumed and the difference of effective masses on two sides of the junction is taken into account. The quantum mechanical transmission coefficient is calculated by a combined numerical and WKB method. Application of the present model to an AlxGa1-xAsGaAs N-n heterojunction is performed and it gives rise to rectifying characteristics together with non-saturated reverse current. Comparison with the classical thermionic emission model is made to show the significance of tunneling and effect of quantum mechanical reflection. © 1979.
Persistent Identifierhttp://hdl.handle.net/10722/154797
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:42Z-
dc.date.available2012-08-08T08:30:42Z-
dc.date.issued1979en_US
dc.identifier.citationSolid State Electronics, 1979, v. 22 n. 3, p. 241-248en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154797-
dc.description.abstractA general theory is presented to describe the carrier transport across heterojunction interfaces. In matching the boundary conditions at the interface, the conservation of total energy and perpendicular momentum is assumed and the difference of effective masses on two sides of the junction is taken into account. The quantum mechanical transmission coefficient is calculated by a combined numerical and WKB method. Application of the present model to an AlxGa1-xAsGaAs N-n heterojunction is performed and it gives rise to rectifying characteristics together with non-saturated reverse current. Comparison with the classical thermionic emission model is made to show the significance of tunneling and effect of quantum mechanical reflection. © 1979.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleCarrier transport across heterojunction interfacesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0018444725en_US
dc.identifier.volume22en_US
dc.identifier.issue3en_US
dc.identifier.spage241en_US
dc.identifier.epage248en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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