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Article: Carrier transport across heterojunction interfaces
| Title | Carrier transport across heterojunction interfaces |
|---|---|
| Authors | |
| Issue Date | 1979 |
| Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse |
| Citation | Solid State Electronics, 1979, v. 22 n. 3, p. 241-248 How to Cite? |
| Abstract | A general theory is presented to describe the carrier transport across heterojunction interfaces. In matching the boundary conditions at the interface, the conservation of total energy and perpendicular momentum is assumed and the difference of effective masses on two sides of the junction is taken into account. The quantum mechanical transmission coefficient is calculated by a combined numerical and WKB method. Application of the present model to an AlxGa1-xAsGaAs N-n heterojunction is performed and it gives rise to rectifying characteristics together with non-saturated reverse current. Comparison with the classical thermionic emission model is made to show the significance of tunneling and effect of quantum mechanical reflection. © 1979. |
| Persistent Identifier | http://hdl.handle.net/10722/154797 |
| ISSN | 2023 Impact Factor: 1.4 2023 SCImago Journal Rankings: 0.348 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wu, CM | en_US |
| dc.contributor.author | Yang, ES | en_US |
| dc.date.accessioned | 2012-08-08T08:30:42Z | - |
| dc.date.available | 2012-08-08T08:30:42Z | - |
| dc.date.issued | 1979 | en_US |
| dc.identifier.citation | Solid State Electronics, 1979, v. 22 n. 3, p. 241-248 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/154797 | - |
| dc.description.abstract | A general theory is presented to describe the carrier transport across heterojunction interfaces. In matching the boundary conditions at the interface, the conservation of total energy and perpendicular momentum is assumed and the difference of effective masses on two sides of the junction is taken into account. The quantum mechanical transmission coefficient is calculated by a combined numerical and WKB method. Application of the present model to an AlxGa1-xAsGaAs N-n heterojunction is performed and it gives rise to rectifying characteristics together with non-saturated reverse current. Comparison with the classical thermionic emission model is made to show the significance of tunneling and effect of quantum mechanical reflection. © 1979. | en_US |
| dc.language | eng | en_US |
| dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse | en_US |
| dc.relation.ispartof | Solid State Electronics | en_US |
| dc.title | Carrier transport across heterojunction interfaces | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
| dc.identifier.authority | Yang, ES=rp00199 | en_US |
| dc.description.nature | link_to_subscribed_fulltext | en_US |
| dc.identifier.scopus | eid_2-s2.0-0018444725 | en_US |
| dc.identifier.volume | 22 | en_US |
| dc.identifier.issue | 3 | en_US |
| dc.identifier.spage | 241 | en_US |
| dc.identifier.epage | 248 | en_US |
| dc.identifier.isi | WOS:A1979GP01500005 | - |
| dc.publisher.place | United Kingdom | en_US |
| dc.identifier.scopusauthorid | Wu, CM=23032716500 | en_US |
| dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
| dc.identifier.issnl | 0038-1101 | - |