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Article: TRANSPORT OF MAJORITY AND MINORITY CARRIERS IN 2- mu m-DIAMETER Pt-GaAs SCHOTTKY BARRIERS.

TitleTRANSPORT OF MAJORITY AND MINORITY CARRIERS IN 2- mu m-DIAMETER Pt-GaAs SCHOTTKY BARRIERS.
Authors
Issue Date1979
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Trans Electron Devices, 1979, v. ED-26 n. 3, p. 214-219 How to Cite?
AbstractAn experimental study of small area (2- mu m-diameter) Pt-GaAs Schottky barrier diodes has been made, by using a wafer chip with a matrix of these diodes lying within approximately a minority carrier diffusion length of one another. Using one diode as collector and another as emitter, transistor measurements indicated that the dominant contribution to the current is the majority-carrier thermiconic field emission current for large forward-bias voltage whereas the smaller forward-bias recombination in the space-charge region was most important. The minority carrier injection ratio is measurable only for large forward-bias voltages, decreasing from approximately equals 10** minus **2 to 10** minus **5 as V//E//B increases from 0. 5 to 1. 0 V. The minority carrier diffusion length was measured to be L//p approximately equals 1. 3 mu m. These results are of considerable significance for the understanding and optimization of the performance of these devices as classical detectors and mixers.
Persistent Identifierhttp://hdl.handle.net/10722/154796
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorChan, EYen_US
dc.contributor.authorCard, Howard Cen_US
dc.contributor.authorYang, Edward Sen_US
dc.contributor.authorKerr, Anthony Ren_US
dc.contributor.authorMattauch, Robert Jen_US
dc.date.accessioned2012-08-08T08:30:42Z-
dc.date.available2012-08-08T08:30:42Z-
dc.date.issued1979en_US
dc.identifier.citationIeee Trans Electron Devices, 1979, v. ED-26 n. 3, p. 214-219en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154796-
dc.description.abstractAn experimental study of small area (2- mu m-diameter) Pt-GaAs Schottky barrier diodes has been made, by using a wafer chip with a matrix of these diodes lying within approximately a minority carrier diffusion length of one another. Using one diode as collector and another as emitter, transistor measurements indicated that the dominant contribution to the current is the majority-carrier thermiconic field emission current for large forward-bias voltage whereas the smaller forward-bias recombination in the space-charge region was most important. The minority carrier injection ratio is measurable only for large forward-bias voltages, decreasing from approximately equals 10** minus **2 to 10** minus **5 as V//E//B increases from 0. 5 to 1. 0 V. The minority carrier diffusion length was measured to be L//p approximately equals 1. 3 mu m. These results are of considerable significance for the understanding and optimization of the performance of these devices as classical detectors and mixers.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Trans Electron Devicesen_US
dc.titleTRANSPORT OF MAJORITY AND MINORITY CARRIERS IN 2- mu m-DIAMETER Pt-GaAs SCHOTTKY BARRIERS.en_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0018443308en_US
dc.identifier.volumeED-26en_US
dc.identifier.issue3en_US
dc.identifier.spage214en_US
dc.identifier.epage219en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, EY=55222935700en_US
dc.identifier.scopusauthoridCard, Howard C=7004748017en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US
dc.identifier.scopusauthoridKerr, Anthony R=7201359022en_US
dc.identifier.scopusauthoridMattauch, Robert J=7003518886en_US

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