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Article: Microwave BARITT diode with retarding field-An investigation

TitleMicrowave BARITT diode with retarding field-An investigation
Authors
Issue Date1977
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1977, v. 20 n. 4, p. 285-289 How to Cite?
AbstractStudies have been made on a new n+ipvn+ reach through structure operated as a BARITT diode. Unlike earlier BARITT structures, the present one has an additional region (the i-layer) added to it so as to provide a longer retarding field region. By taking advantage of the carrier diffusion at low velocities against an opposing field in this region, the injected current may be delayed relative to the a.c. voltage and improved efficiency BARITT diodes can be expected. In this paper, a one dimensional model is used to illustrate the basic operating mode and advantages of the structure. A d.c. analysis is performed and expressions for the reach through voltage and, critical voltage at which the space charge effects of the injected carriers become apparent are obtained. Furthermore an a.c. analysis is made and a relation for the transit time delay in the retarding field region is developed. © 1977.
Persistent Identifierhttp://hdl.handle.net/10722/154791
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorEknoyan, Oen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:41Z-
dc.date.available2012-08-08T08:30:41Z-
dc.date.issued1977en_US
dc.identifier.citationSolid State Electronics, 1977, v. 20 n. 4, p. 285-289en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154791-
dc.description.abstractStudies have been made on a new n+ipvn+ reach through structure operated as a BARITT diode. Unlike earlier BARITT structures, the present one has an additional region (the i-layer) added to it so as to provide a longer retarding field region. By taking advantage of the carrier diffusion at low velocities against an opposing field in this region, the injected current may be delayed relative to the a.c. voltage and improved efficiency BARITT diodes can be expected. In this paper, a one dimensional model is used to illustrate the basic operating mode and advantages of the structure. A d.c. analysis is performed and expressions for the reach through voltage and, critical voltage at which the space charge effects of the injected carriers become apparent are obtained. Furthermore an a.c. analysis is made and a relation for the transit time delay in the retarding field region is developed. © 1977.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleMicrowave BARITT diode with retarding field-An investigationen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0017478369en_US
dc.identifier.volume20en_US
dc.identifier.issue4en_US
dc.identifier.spage285en_US
dc.identifier.epage289en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridEknoyan, O=7004454463en_US
dc.identifier.scopusauthoridSze, SM=36346124100en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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