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Article: Multilayered ion-implanted BARITT diodes with improved efficiency

TitleMultilayered ion-implanted BARITT diodes with improved efficiency
Authors
Issue Date1977
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1977, v. 20 n. 4, p. 291-295 How to Cite?
AbstractBased on the model suggested in an accompanying paper[1], diodes having the multilayered n+ipvn+ structure have been fabricated from silicon material using ion implantation techniques. Systematic descriptions of their fabrication and evaluation are presented. Microwave CW oscillations at C-band (∼7.5 Ghz) have been observed in some of our devices. The measured maximum power output was in the range of 40 mw and the efficiency was ∼5%. The obtained efficiency is the best reported for any BARITT diode. This result indicatest hat the retarding field region in BARITT diodes may be used advantageously to provide a favorable phase delay between the injected current and the a.c. voltage and leads to improved efficiency BARITT oscillators. © 1977.
Persistent Identifierhttp://hdl.handle.net/10722/154790
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorEknoyan, Oen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2012-08-08T08:30:40Z-
dc.date.available2012-08-08T08:30:40Z-
dc.date.issued1977en_US
dc.identifier.citationSolid State Electronics, 1977, v. 20 n. 4, p. 291-295en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154790-
dc.description.abstractBased on the model suggested in an accompanying paper[1], diodes having the multilayered n+ipvn+ structure have been fabricated from silicon material using ion implantation techniques. Systematic descriptions of their fabrication and evaluation are presented. Microwave CW oscillations at C-band (∼7.5 Ghz) have been observed in some of our devices. The measured maximum power output was in the range of 40 mw and the efficiency was ∼5%. The obtained efficiency is the best reported for any BARITT diode. This result indicatest hat the retarding field region in BARITT diodes may be used advantageously to provide a favorable phase delay between the injected current and the a.c. voltage and leads to improved efficiency BARITT oscillators. © 1977.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleMultilayered ion-implanted BARITT diodes with improved efficiencyen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0017478320en_US
dc.identifier.volume20en_US
dc.identifier.issue4en_US
dc.identifier.spage291en_US
dc.identifier.epage295en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridEknoyan, O=7004454463en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridSze, SM=36346124100en_US

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