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Article: THEORY OF ELECTRO-ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS.

TitleTHEORY OF ELECTRO-ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS.
Authors
Yang, E
Issue Date1975
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (B) Basic Research, 1975, v. 70 n. 2, p. 549-554 How to Cite?
AbstractThe imaginary part of the interband dielectric function of a heavily doped semiconductor in the presence of a uniform electric field is calculated. The expression is calculated directly from the Kubo equation in the one-electron approximation. Under weak field and low temperature approximation, the dielectric function of a heavily doped semiconductor in the presence of a uniform electric field may be calculated explicitly. The results are given for both n- and p-type semiconductors.
Persistent Identifierhttp://hdl.handle.net/10722/154787
ISSN
0370-1972
2021 Impact Factor: 1.782
2020 SCImago Journal Rankings: 0.510

 

DC FieldValueLanguage
dc.contributor.authorYang, Een_US
dc.date.accessioned2012-08-08T08:30:39Z-
dc.date.available2012-08-08T08:30:39Z-
dc.date.issued1975en_US
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 1975, v. 70 n. 2, p. 549-554en_US
dc.identifier.issn0370-1972en_US
dc.identifier.urihttp://hdl.handle.net/10722/154787-
dc.description.abstractThe imaginary part of the interband dielectric function of a heavily doped semiconductor in the presence of a uniform electric field is calculated. The expression is calculated directly from the Kubo equation in the one-electron approximation. Under weak field and low temperature approximation, the dielectric function of a heavily doped semiconductor in the presence of a uniform electric field may be calculated explicitly. The results are given for both n- and p-type semiconductors.en_US
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_US
dc.relation.ispartofPhysica Status Solidi (B) Basic Researchen_US
dc.titleTHEORY OF ELECTRO-ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS.en_US
dc.typeArticleen_US
dc.identifier.emailYang, E:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, E=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0016536192en_US
dc.identifier.volume70en_US
dc.identifier.issue2en_US
dc.identifier.spage549en_US
dc.identifier.epage554en_US
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridYang, E=7202021229en_US
dc.identifier.issnl0370-1972-

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