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Article: A method for the determination of electron capture cross-section at imperfection centers in gallium arsenide of electroluminescent diodes

TitleA method for the determination of electron capture cross-section at imperfection centers in gallium arsenide of electroluminescent diodes
Authors
Lo, WYang, ES
Issue Date1974
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1974, v. 17 n. 2, p. 113-116 How to Cite?
AbstractA simple method is described for the determination of the electron capture cross-section at the imperfection centers with a dominant deep level in semiconductor electroluminescent diodes. In this method, the electron capture cross-section is determined through simultaneous measurements of the temperature dependence of the minority carrier lifetime and the external quantum efficiency of the EL diodes. When the method is applied to Zn-diffused GaAs EL diodes, the average electron capture cross-section is found to be 10 -16 cm 2 at a level either 0·1 or 0·2 eV away from the mid-gap. © 1974.
Persistent Identifierhttp://hdl.handle.net/10722/154784
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:A1974S208800001

 

DC FieldValueLanguage
dc.contributor.authorLo, Wen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:38Z-
dc.date.available2012-08-08T08:30:38Z-
dc.date.issued1974en_US
dc.identifier.citationSolid State Electronics, 1974, v. 17 n. 2, p. 113-116en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154784-
dc.description.abstractA simple method is described for the determination of the electron capture cross-section at the imperfection centers with a dominant deep level in semiconductor electroluminescent diodes. In this method, the electron capture cross-section is determined through simultaneous measurements of the temperature dependence of the minority carrier lifetime and the external quantum efficiency of the EL diodes. When the method is applied to Zn-diffused GaAs EL diodes, the average electron capture cross-section is found to be 10 -16 cm 2 at a level either 0·1 or 0·2 eV away from the mid-gap. © 1974.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleA method for the determination of electron capture cross-section at imperfection centers in gallium arsenide of electroluminescent diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0016027388en_US
dc.identifier.volume17en_US
dc.identifier.issue2en_US
dc.identifier.spage113en_US
dc.identifier.epage116en_US
dc.identifier.isiWOS:A1974S208800001-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLo, W=7201502553en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0038-1101-

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