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Article: TECHNIQUE FOR THE INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N JUNCTION DEVICES: APPLICATION TO GaAs ELECTROLUMINESCENT DIODES.

TitleTECHNIQUE FOR THE INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N JUNCTION DEVICES: APPLICATION TO GaAs ELECTROLUMINESCENT DIODES.
Authors
Lo, WayneYang, Edward S
Issue Date1973
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1973, v. ED-20 n. 8, p. 684-691 How to Cite?
AbstractIn addition, the authors discuss the charge distribution conditions in the depleted region of a linearly graded p-n junction. The results are then used to derive the C-V relationships by solving Poisson's equation. The forward current-voltage relationship is derived. Experimental results are given and a general discussion of their implications is presented.
Persistent Identifierhttp://hdl.handle.net/10722/154783
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:A1973Q418500003

 

DC FieldValueLanguage
dc.contributor.authorLo, Wayneen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:30:38Z-
dc.date.available2012-08-08T08:30:38Z-
dc.date.issued1973en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1973, v. ED-20 n. 8, p. 684-691en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154783-
dc.description.abstractIn addition, the authors discuss the charge distribution conditions in the depleted region of a linearly graded p-n junction. The results are then used to derive the C-V relationships by solving Poisson's equation. The forward current-voltage relationship is derived. Experimental results are given and a general discussion of their implications is presented.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleTECHNIQUE FOR THE INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N JUNCTION DEVICES: APPLICATION TO GaAs ELECTROLUMINESCENT DIODES.en_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0015655446en_US
dc.identifier.volumeED-20en_US
dc.identifier.issue8en_US
dc.identifier.spage684en_US
dc.identifier.epage691en_US
dc.identifier.isiWOS:A1973Q418500003-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLo, Wayne=7201502553en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US
dc.identifier.issnl0018-9383-

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