File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Injected carrier lifetime and aging of GaAs injection lasers

TitleInjected carrier lifetime and aging of GaAs injection lasers
Authors
Issue Date1971
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1971, v. 42 n. 13, p. 5635-5639 How to Cite?
AbstractAging experiments of Zn-diffused GaAs injection lasers have been performed at liquid-nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.
Persistent Identifierhttp://hdl.handle.net/10722/154781
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:38Z-
dc.date.available2012-08-08T08:30:38Z-
dc.date.issued1971en_US
dc.identifier.citationJournal Of Applied Physics, 1971, v. 42 n. 13, p. 5635-5639en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154781-
dc.description.abstractAging experiments of Zn-diffused GaAs injection lasers have been performed at liquid-nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleInjected carrier lifetime and aging of GaAs injection lasersen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1659992en_US
dc.identifier.scopuseid_2-s2.0-0015206218en_US
dc.identifier.volume42en_US
dc.identifier.issue13en_US
dc.identifier.spage5635en_US
dc.identifier.epage5639en_US
dc.identifier.isiWOS:A1971L056300066-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats