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Article: Injected carrier lifetime and aging of GaAs injection lasers

TitleInjected carrier lifetime and aging of GaAs injection lasers
Authors
Yang, ES
Issue Date1971
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1971, v. 42 n. 13, p. 5635-5639 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1659992
AbstractAging experiments of Zn-diffused GaAs injection lasers have been performed at liquid-nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.
Persistent Identifierhttp://hdl.handle.net/10722/154781
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1971L056300066

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:38Z-
dc.date.available2012-08-08T08:30:38Z-
dc.date.issued1971en_US
dc.identifier.citationJournal of Applied Physics, 1971, v. 42 n. 13, p. 5635-5639-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154781-
dc.description.abstractAging experiments of Zn-diffused GaAs injection lasers have been performed at liquid-nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleInjected carrier lifetime and aging of GaAs injection lasersen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1659992en_US
dc.identifier.scopuseid_2-s2.0-0015206218en_US
dc.identifier.volume42en_US
dc.identifier.issue13en_US
dc.identifier.spage5635en_US
dc.identifier.epage5639en_US
dc.identifier.isiWOS:A1971L056300066-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0021-8979-

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