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Article: Carrier accumulation and space-charge-limited current flow in field-effect transistors

TitleCarrier accumulation and space-charge-limited current flow in field-effect transistors
Authors
Issue Date1970
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1970, v. 13 n. 12, p. 1577-1589 How to Cite?
AbstractThis paper reports an investigation of devices fabricated by lateral diffusion techniques which have non-uniform doping profiles along the channel. The application of a two-dimensional numerical method to a device model representing these devices shows carrier accumulation in the conductive channel. The increase of carrier concentration with the increasing drain-to-source voltages is caused by the interaction of the source and the drain N +-regions. This indicates the possibility of the space-charge-limited current which is a different conduction mechanism from that of the conventional devices. From the study of one-dimensional N +-N-N + structures, the length-to-L DE (extrinsic Debye length) ratio of the channel and the crossover voltage have been recognized as important parameters in realizing the space-charge-limited current. The drain characteristics of a device model with a small crossover voltage and a small length-to-L DE ratio are obtained by a simple analysis. Triode-like characteristics are found for this model as expected. © 1970.
Persistent Identifierhttp://hdl.handle.net/10722/154780
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorKim, CKen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:38Z-
dc.date.available2012-08-08T08:30:38Z-
dc.date.issued1970en_US
dc.identifier.citationSolid State Electronics, 1970, v. 13 n. 12, p. 1577-1589en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154780-
dc.description.abstractThis paper reports an investigation of devices fabricated by lateral diffusion techniques which have non-uniform doping profiles along the channel. The application of a two-dimensional numerical method to a device model representing these devices shows carrier accumulation in the conductive channel. The increase of carrier concentration with the increasing drain-to-source voltages is caused by the interaction of the source and the drain N +-regions. This indicates the possibility of the space-charge-limited current which is a different conduction mechanism from that of the conventional devices. From the study of one-dimensional N +-N-N + structures, the length-to-L DE (extrinsic Debye length) ratio of the channel and the crossover voltage have been recognized as important parameters in realizing the space-charge-limited current. The drain characteristics of a device model with a small crossover voltage and a small length-to-L DE ratio are obtained by a simple analysis. Triode-like characteristics are found for this model as expected. © 1970.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleCarrier accumulation and space-charge-limited current flow in field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0014924875en_US
dc.identifier.volume13en_US
dc.identifier.issue12en_US
dc.identifier.spage1577en_US
dc.identifier.epage1589en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridKim, CK=24599895700en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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