File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

TitleOff-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric
Authors
Issue Date1991
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1991, v. 59 n. 23, p. 3006-3008 How to Cite?
AbstractThe effects of nitridation and reoxidation on the off-state leakage currents of n-channel metal-oxide-semiconductor-field-effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low-field range but ensuing reoxidation can effectively reduce it. Nitridation-induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap-assisted tunneling model has been proposed to explain this off-state gate leakage.
Persistent Identifierhttp://hdl.handle.net/10722/154777
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorKo, PKen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:37Z-
dc.date.available2012-08-08T08:30:37Z-
dc.date.issued1991en_US
dc.identifier.citationApplied Physics Letters, 1991, v. 59 n. 23, p. 3006-3008en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154777-
dc.description.abstractThe effects of nitridation and reoxidation on the off-state leakage currents of n-channel metal-oxide-semiconductor-field-effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low-field range but ensuing reoxidation can effectively reduce it. Nitridation-induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap-assisted tunneling model has been proposed to explain this off-state gate leakage.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleOff-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectricen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.105826en_US
dc.identifier.scopuseid_2-s2.0-0012645875en_US
dc.identifier.volume59en_US
dc.identifier.issue23en_US
dc.identifier.spage3006en_US
dc.identifier.epage3008en_US
dc.identifier.isiWOS:A1991GT01700029-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridLiu, ZH=7406683158en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridKo, PK=7102478119en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats