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Article: Effects of nitridation temperature on the electron trap characteristics of nitrided-oxide metal-oxide-semiconductor capacitors

TitleEffects of nitridation temperature on the electron trap characteristics of nitrided-oxide metal-oxide-semiconductor capacitors
Authors
Fleischer, SLai, PTCheng, YC
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1993, v. 74 n. 1, p. 740-742 How to Cite?
DOI: http://dx.doi.org/10.1063/1.355243
AbstractIn this work the effects of nitridation temperature on trap parameters have been studied. Using a high-field technique, no significant change in capture cross section (σ) could be seen with all devices having σ∼10-15 cm2, indicating the traps are neutral. Trap energies, extracted using a novel technique based on a simple trap-assisted tunneling model, were found to be ∼2.7 eV for nitridation temperatures below 1100°C, falling to ∼2.4 eV above this temperature. Trap densities, also extracted using the same method, followed a similar trend.
Persistent Identifierhttp://hdl.handle.net/10722/154775
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1993LK46900114

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:36Z-
dc.date.available2012-08-08T08:30:36Z-
dc.date.issued1993en_US
dc.identifier.citationJournal of Applied Physics, 1993, v. 74 n. 1, p. 740-742-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154775-
dc.description.abstractIn this work the effects of nitridation temperature on trap parameters have been studied. Using a high-field technique, no significant change in capture cross section (σ) could be seen with all devices having σ∼10-15 cm2, indicating the traps are neutral. Trap energies, extracted using a novel technique based on a simple trap-assisted tunneling model, were found to be ∼2.7 eV for nitridation temperatures below 1100°C, falling to ∼2.4 eV above this temperature. Trap densities, also extracted using the same method, followed a similar trend.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleEffects of nitridation temperature on the electron trap characteristics of nitrided-oxide metal-oxide-semiconductor capacitorsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.355243en_US
dc.identifier.scopuseid_2-s2.0-0007439734en_US
dc.identifier.volume74en_US
dc.identifier.issue1en_US
dc.identifier.spage740en_US
dc.identifier.epage742en_US
dc.identifier.isiWOS:A1993LK46900114-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US
dc.identifier.issnl0021-8979-

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