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Article: A new method for extracting the trap energy in insulators

TitleA new method for extracting the trap energy in insulators
Authors
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1993, v. 73 n. 7, p. 3348-3351 How to Cite?
AbstractA simple procedure is reported for extracting the energy of trap levels from the I-V characteristics of insulators at room temperature. It is shown that by plotting ln(JE) vs 1/E it is possible to obtain the trap energy directly from the slope, and an estimate of the trap density from the intercept. Furthermore, it is demonstrated that our simplified, trap-assisted tunneling equation differs from the exact solution by only ∼1%-3% for "typical" nitridation-induced trap energies (2-3 eV), and for fields above 4 MV/cm. At lower trap energies this error is shown to be manifested only in the extracted trap densities and hence the new model can still be used to obtain the trap depth. For nitrided-oxide capacitors it is shown that this nitridation-induced trap energy is ∼2.2 eV which is in good agreement with the work of others. For transistors fabricated on the same wafers evidence is found for a distribution of shallow (≤1 eV) traps which could be due to damage introduced during the source/drain implant.
Persistent Identifierhttp://hdl.handle.net/10722/154774
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:36Z-
dc.date.available2012-08-08T08:30:36Z-
dc.date.issued1993en_US
dc.identifier.citationJournal Of Applied Physics, 1993, v. 73 n. 7, p. 3348-3351en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154774-
dc.description.abstractA simple procedure is reported for extracting the energy of trap levels from the I-V characteristics of insulators at room temperature. It is shown that by plotting ln(JE) vs 1/E it is possible to obtain the trap energy directly from the slope, and an estimate of the trap density from the intercept. Furthermore, it is demonstrated that our simplified, trap-assisted tunneling equation differs from the exact solution by only ∼1%-3% for "typical" nitridation-induced trap energies (2-3 eV), and for fields above 4 MV/cm. At lower trap energies this error is shown to be manifested only in the extracted trap densities and hence the new model can still be used to obtain the trap depth. For nitrided-oxide capacitors it is shown that this nitridation-induced trap energy is ∼2.2 eV which is in good agreement with the work of others. For transistors fabricated on the same wafers evidence is found for a distribution of shallow (≤1 eV) traps which could be due to damage introduced during the source/drain implant.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleA new method for extracting the trap energy in insulatorsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.352934en_US
dc.identifier.scopuseid_2-s2.0-0007393286en_US
dc.identifier.volume73en_US
dc.identifier.issue7en_US
dc.identifier.spage3348en_US
dc.identifier.epage3351en_US
dc.identifier.isiWOS:A1993KV03100034-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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