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Article: Optical properties of InGaAs/InAlAs diffused double quantum wells

TitleOptical properties of InGaAs/InAlAs diffused double quantum wells
Authors
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2000, v. 87 n. 6, p. 2956-2966 How to Cite?
AbstractThe effects of interdiffusion on the subbands and optical properties of InGaAsAnAlAs double quantum well (QW) have been theoretically studied. The results show that since a double QW (DQW) can be diffused to become an effectively single QW structure, the characteristic features in the subbands structure and optical properties of a strongly coupled DQW structure and that of a single QW structure can be obtained by a suitable annealing time. Moreover, the increase in separation between the first symmetric and antisymmetric heavy hole subbands and the increase in the spin splitting of the valence subbands of the diffused DQW, due to an applied electric field, diminish when annealing time increases. In optimizing the In0.53(AlaGa1-a)0.47As/In 0.52Al0.48As DQW structure, the results show that symmetric DQW with no Al content in wells can provide large material gain and radiative spontaneous recombination rate. With interdiffusion, the material gain and recombination rate reduce but the reduction saturates when the DQW structure is diffused to effectively become a single graded QW. By subjecting the DQW and an as-grown single QW to the same annealing conditions (where the summation of the width of the two wells and the separation barrier of the DQW equals the well width of the single QW), the diffused DQW can provide a larger material gain and radiative recombination rate than the diffused single QW when the annealing time is short. Therefore, the short-time diffused DQW is more useful for laser applications. Besides, since Al diffuses into the wells, the transition energy of the QW structure increases so that the operating wavelength of the optical devices can be adjusted. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/154772
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_US
dc.date.accessioned2012-08-08T08:30:35Z-
dc.date.available2012-08-08T08:30:35Z-
dc.date.issued2000en_US
dc.identifier.citationJournal Of Applied Physics, 2000, v. 87 n. 6, p. 2956-2966en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154772-
dc.description.abstractThe effects of interdiffusion on the subbands and optical properties of InGaAsAnAlAs double quantum well (QW) have been theoretically studied. The results show that since a double QW (DQW) can be diffused to become an effectively single QW structure, the characteristic features in the subbands structure and optical properties of a strongly coupled DQW structure and that of a single QW structure can be obtained by a suitable annealing time. Moreover, the increase in separation between the first symmetric and antisymmetric heavy hole subbands and the increase in the spin splitting of the valence subbands of the diffused DQW, due to an applied electric field, diminish when annealing time increases. In optimizing the In0.53(AlaGa1-a)0.47As/In 0.52Al0.48As DQW structure, the results show that symmetric DQW with no Al content in wells can provide large material gain and radiative spontaneous recombination rate. With interdiffusion, the material gain and recombination rate reduce but the reduction saturates when the DQW structure is diffused to effectively become a single graded QW. By subjecting the DQW and an as-grown single QW to the same annealing conditions (where the summation of the width of the two wells and the separation barrier of the DQW equals the well width of the single QW), the diffused DQW can provide a larger material gain and radiative recombination rate than the diffused single QW when the annealing time is short. Therefore, the short-time diffused DQW is more useful for laser applications. Besides, since Al diffuses into the wells, the transition energy of the QW structure increases so that the operating wavelength of the optical devices can be adjusted. © 2000 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleOptical properties of InGaAs/InAlAs diffused double quantum wellsen_US
dc.typeArticleen_US
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, WCH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0004608329en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0004608329&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume87en_US
dc.identifier.issue6en_US
dc.identifier.spage2956en_US
dc.identifier.epage2966en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoy, WCH=7006202371en_US

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