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Article: SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma

TitleSiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma
Authors
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1993, v. 63 n. 21, p. 2938-2940 How to Cite?
AbstractSiGe gate oxide prepared at low temperatures (25-400°C) by electron cyclotron resonance (ECR) plasma is reported. 100-200 Å oxides were grown on Si 0.8Ge 0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.
Persistent Identifierhttp://hdl.handle.net/10722/154770
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, PWen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:35Z-
dc.date.available2012-08-08T08:30:35Z-
dc.date.issued1993en_US
dc.identifier.citationApplied Physics Letters, 1993, v. 63 n. 21, p. 2938-2940en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154770-
dc.description.abstractSiGe gate oxide prepared at low temperatures (25-400°C) by electron cyclotron resonance (ECR) plasma is reported. 100-200 Å oxides were grown on Si 0.8Ge 0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleSiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasmaen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.110790en_US
dc.identifier.scopuseid_2-s2.0-0001760861en_US
dc.identifier.volume63en_US
dc.identifier.issue21en_US
dc.identifier.spage2938en_US
dc.identifier.epage2940en_US
dc.identifier.isiWOS:A1993MJ16200028-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, PW=7404773352en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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