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Article: Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys

TitleInterfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys
Authors
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1992, v. 60 n. 5, p. 577-579 How to Cite?
AbstractThe evolution of interfacial reactions during the deposition of Pt and Pd on epitaxial Si1-xGex alloys was studied using x-ray photoelectron spectroscopy (XPS) for metal coverage up to 10 Å. Auger electron depth profiling was performed on a thicker metal overlayer before and after in vacuo annealing to study the redistribution of composition in the reactions. We have found that Pt and Pd react mainly with Si to form silicides at 350°C, leaving some Ge to segregate at the surface. These results were correlated with Schottky barrier height measurements. We found that the Schottky barrier heights of Pt/n-Si0.8Ge0.2 and Pd/n-Si 0.8Ge0.2 are about the same, pinned at 0.68 eV, which is much smaller than those of n-Si. These barrier heights are quite stable up to 550°C.
Persistent Identifierhttp://hdl.handle.net/10722/154766
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiou, HKen_US
dc.contributor.authorWu, Xen_US
dc.contributor.authorGennser, Uen_US
dc.contributor.authorKesan, VPen_US
dc.contributor.authorIyer, SSen_US
dc.contributor.authorTu, KNen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:33Z-
dc.date.available2012-08-08T08:30:33Z-
dc.date.issued1992en_US
dc.identifier.citationApplied Physics Letters, 1992, v. 60 n. 5, p. 577-579en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154766-
dc.description.abstractThe evolution of interfacial reactions during the deposition of Pt and Pd on epitaxial Si1-xGex alloys was studied using x-ray photoelectron spectroscopy (XPS) for metal coverage up to 10 Å. Auger electron depth profiling was performed on a thicker metal overlayer before and after in vacuo annealing to study the redistribution of composition in the reactions. We have found that Pt and Pd react mainly with Si to form silicides at 350°C, leaving some Ge to segregate at the surface. These results were correlated with Schottky barrier height measurements. We found that the Schottky barrier heights of Pt/n-Si0.8Ge0.2 and Pd/n-Si 0.8Ge0.2 are about the same, pinned at 0.68 eV, which is much smaller than those of n-Si. These barrier heights are quite stable up to 550°C.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleInterfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloysen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.106615en_US
dc.identifier.scopuseid_2-s2.0-0000988828en_US
dc.identifier.volume60en_US
dc.identifier.issue5en_US
dc.identifier.spage577en_US
dc.identifier.epage579en_US
dc.identifier.isiWOS:A1992HB58200020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiou, HK=7102330018en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridGennser, U=7003475817en_US
dc.identifier.scopusauthoridKesan, VP=6701760274en_US
dc.identifier.scopusauthoridIyer, SS=7202947597en_US
dc.identifier.scopusauthoridTu, KN=16198913200en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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