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Article: Optically induced electromagnetic radiation from semiconductor surfaces

TitleOptically induced electromagnetic radiation from semiconductor surfaces
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1990, v. 56 n. 22, p. 2228-2230 How to Cite?
AbstractUltrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
Persistent Identifierhttp://hdl.handle.net/10722/154765
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, XCen_US
dc.contributor.authorDarrow, JTen_US
dc.contributor.authorHu, BBen_US
dc.contributor.authorAuston, DHen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorTham, Pen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:32Z-
dc.date.available2012-08-08T08:30:32Z-
dc.date.issued1990en_US
dc.identifier.citationApplied Physics Letters, 1990, v. 56 n. 22, p. 2228-2230en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154765-
dc.description.abstractUltrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleOptically induced electromagnetic radiation from semiconductor surfacesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.102952en_US
dc.identifier.scopuseid_2-s2.0-0000942863en_US
dc.identifier.volume56en_US
dc.identifier.issue22en_US
dc.identifier.spage2228en_US
dc.identifier.epage2230en_US
dc.identifier.isiWOS:A1990DF14300023-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridZhang, XC=7410280543en_US
dc.identifier.scopusauthoridDarrow, JT=6701531352en_US
dc.identifier.scopusauthoridHu, BB=24325456000en_US
dc.identifier.scopusauthoridAuston, DH=7003905455en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridTham, P=36950432900en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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