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Article: Optically induced electromagnetic radiation from semiconductor surfaces

TitleOptically induced electromagnetic radiation from semiconductor surfaces
Authors
Zhang, XCDarrow, JTHu, BBAuston, DHSchmidt, MTTham, PYang, ES
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1990, v. 56 n. 22, p. 2228-2230 How to Cite?
DOI: http://dx.doi.org/10.1063/1.102952
AbstractUltrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
Persistent Identifierhttp://hdl.handle.net/10722/154765
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1990DF14300023

 

DC FieldValueLanguage
dc.contributor.authorZhang, XCen_US
dc.contributor.authorDarrow, JTen_US
dc.contributor.authorHu, BBen_US
dc.contributor.authorAuston, DHen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorTham, Pen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:32Z-
dc.date.available2012-08-08T08:30:32Z-
dc.date.issued1990en_US
dc.identifier.citationApplied Physics Letters, 1990, v. 56 n. 22, p. 2228-2230-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154765-
dc.description.abstractUltrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleOptically induced electromagnetic radiation from semiconductor surfacesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.102952en_US
dc.identifier.scopuseid_2-s2.0-0000942863en_US
dc.identifier.volume56en_US
dc.identifier.issue22en_US
dc.identifier.spage2228en_US
dc.identifier.epage2230en_US
dc.identifier.isiWOS:A1990DF14300023-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridZhang, XC=7410280543en_US
dc.identifier.scopusauthoridDarrow, JT=6701531352en_US
dc.identifier.scopusauthoridHu, BB=24325456000en_US
dc.identifier.scopusauthoridAuston, DH=7003905455en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridTham, P=36950432900en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0003-6951-

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