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Article: Plasma-induced damage to n-type GaN

TitlePlasma-induced damage to n-type GaN
Authors
Choi, HWChua, SJRaman, APan, JSWee, ATS
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 77 n. 12, p. 1795-1797 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1311605
AbstractThe effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the creation of a Ga-rich surface by the etching process. Nevertheless, the formation of nonradiative recombination centers impaired the PL intensity. Reconstruction of a stoichiometric surface was achieved by annealing. This induced the incorporation of carbon into GaN, deteriorating the PL performance further, but it could be restored by a chemical treatment of 10:1 HF:H2O. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/154761
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000089239000019
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorRaman, Aen_US
dc.contributor.authorPan, JSen_US
dc.contributor.authorWee, ATSen_US
dc.date.accessioned2012-08-08T08:30:31Z-
dc.date.available2012-08-08T08:30:31Z-
dc.date.issued2000en_US
dc.identifier.citationApplied Physics Letters, 2000, v. 77 n. 12, p. 1795-1797-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154761-
dc.description.abstractThe effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the creation of a Ga-rich surface by the etching process. Nevertheless, the formation of nonradiative recombination centers impaired the PL intensity. Reconstruction of a stoichiometric surface was achieved by annealing. This induced the incorporation of carbon into GaN, deteriorating the PL performance further, but it could be restored by a chemical treatment of 10:1 HF:H2O. © 2000 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titlePlasma-induced damage to n-type GaNen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1311605-
dc.identifier.scopuseid_2-s2.0-0000349539en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000349539&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume77en_US
dc.identifier.issue12en_US
dc.identifier.spage1795en_US
dc.identifier.epage1797en_US
dc.identifier.isiWOS:000089239000019-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridRaman, A=7101799185en_US
dc.identifier.scopusauthoridPan, JS=7404098334en_US
dc.identifier.scopusauthoridWee, ATS=7102930093en_US
dc.identifier.issnl0003-6951-

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