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Article: Simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors

TitleSimplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors
Authors
Fleischer, SLai, PTCheng, YC
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1992, v. 72 n. 12, p. 5711-5715 How to Cite?
DOI: http://dx.doi.org/10.1063/1.351923
AbstractConduction has been studied in ultrathin nitrided oxide, re-oxidized nitrided oxide, and nitrogen-annealed nitrided oxide film capacitors in which the nitridation step was performed by a low-partial-pressure nitridation technique. Results indicate that, as well as some degree of barrier lowering due to the build-up of nitrogen at the injecting interface, a trap-assisted mechanism could be responsible for the enhanced conduction exhibited by the nitrided oxide devices. A simplified closed-form trap-assisted tunneling model is employed that produces a fit to the data with a trap depth of 2.1 eV. The difference between this trap model and a model requiring numerical integration was negligibly small (∼2%).
Persistent Identifierhttp://hdl.handle.net/10722/154759
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1992KC85000027

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:30Z-
dc.date.available2012-08-08T08:30:30Z-
dc.date.issued1992en_US
dc.identifier.citationJournal of Applied Physics, 1992, v. 72 n. 12, p. 5711-5715-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154759-
dc.description.abstractConduction has been studied in ultrathin nitrided oxide, re-oxidized nitrided oxide, and nitrogen-annealed nitrided oxide film capacitors in which the nitridation step was performed by a low-partial-pressure nitridation technique. Results indicate that, as well as some degree of barrier lowering due to the build-up of nitrogen at the injecting interface, a trap-assisted mechanism could be responsible for the enhanced conduction exhibited by the nitrided oxide devices. A simplified closed-form trap-assisted tunneling model is employed that produces a fit to the data with a trap depth of 2.1 eV. The difference between this trap model and a model requiring numerical integration was negligibly small (∼2%).en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleSimplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitorsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.351923en_US
dc.identifier.scopuseid_2-s2.0-0000016612en_US
dc.identifier.volume72en_US
dc.identifier.issue12en_US
dc.identifier.spage5711en_US
dc.identifier.epage5715en_US
dc.identifier.isiWOS:A1992KC85000027-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US
dc.identifier.issnl0021-8979-

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