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Article: Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled In xGa 1-xAs/GaAs quantum dots: An experimental and theoretical study

TitleEffects of internal strain and external pressure on electronic structures and optical transitions of self-assembled In xGa 1-xAs/GaAs quantum dots: An experimental and theoretical study
Authors
KeywordsDot system
Emission peaks
External pressures
Gaas
Ground state transition
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2012, v. 112 n. 1 How to Cite?
AbstractThe optical emissive transitions from the ground and excited states of the self-assembled In xGa 1-xAs/GaAs quantum dots (QDs) at room temperature were experimentally measured as a function of the external hydrostatic pressure by means of the confocal micro-photoluminescence technique. The ground state transition is very weak under zero external pressure and the photoluminescence is dominant by the excited state transition. However, the intensity of the ground state transition monotonically increases with increasing the external pressure and eventually become the dominant transition. Their pressure coefficients (PCs) were determined to be 6.8 and 7.1 meV/kbar, respectively, which were astonishingly smaller than those of GaAs bulk and the InGaAs/GaAs reference quantum well. The emission peak from the higher order excited states had a much smaller PC (∼0.5 meV/kbar). The influence of the built-in strain and external hydrostatic pressure on the electronic structures and optical transitions of various In xGa 1-xAs/GaAs QDs was theoretically investigated by using the eight-band k·p method. Good agreement between the theoretical and experimental results was achieved, firmly revealing that the internal built-in strain in the dot system is mainly responsible for the experimental findings. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/152813
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWen, Yen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorQin, Len_HK
dc.contributor.authorShen, ZXen_HK
dc.date.accessioned2012-07-16T09:49:12Z-
dc.date.available2012-07-16T09:49:12Z-
dc.date.issued2012en_HK
dc.identifier.citationJournal Of Applied Physics, 2012, v. 112 n. 1en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/152813-
dc.description.abstractThe optical emissive transitions from the ground and excited states of the self-assembled In xGa 1-xAs/GaAs quantum dots (QDs) at room temperature were experimentally measured as a function of the external hydrostatic pressure by means of the confocal micro-photoluminescence technique. The ground state transition is very weak under zero external pressure and the photoluminescence is dominant by the excited state transition. However, the intensity of the ground state transition monotonically increases with increasing the external pressure and eventually become the dominant transition. Their pressure coefficients (PCs) were determined to be 6.8 and 7.1 meV/kbar, respectively, which were astonishingly smaller than those of GaAs bulk and the InGaAs/GaAs reference quantum well. The emission peak from the higher order excited states had a much smaller PC (∼0.5 meV/kbar). The influence of the built-in strain and external hydrostatic pressure on the electronic structures and optical transitions of various In xGa 1-xAs/GaAs QDs was theoretically investigated by using the eight-band k·p method. Good agreement between the theoretical and experimental results was achieved, firmly revealing that the internal built-in strain in the dot system is mainly responsible for the experimental findings. © 2012 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2012, v. 112 n. 1, article no. 014301) and may be found at (http://jap.aip.org/resource/1/japiau/v112/i1/p014301_s1).en_US
dc.subjectDot system-
dc.subjectEmission peaks-
dc.subjectExternal pressures-
dc.subjectGaas-
dc.subjectGround state transition-
dc.titleEffects of internal strain and external pressure on electronic structures and optical transitions of self-assembled In xGa 1-xAs/GaAs quantum dots: An experimental and theoretical studyen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4730628en_HK
dc.identifier.scopuseid_2-s2.0-84864148510en_HK
dc.identifier.hkuros201647en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84864148510&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume112en_HK
dc.identifier.issue1en_HK
dc.identifier.isiWOS:000306513400109-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWen, Y=55319400700en_HK
dc.identifier.scopusauthoridYang, M=55319549800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridQin, L=7201950981en_HK
dc.identifier.scopusauthoridShen, ZX=55318861500en_HK

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