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Article: Structure and dielectric properties of amorphous high-κ oxides: HfO 2, ZrO 2, and their alloys
Title | Structure and dielectric properties of amorphous high-κ oxides: HfO 2, ZrO 2, and their alloys | ||||||||||
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Authors | |||||||||||
Issue Date | 2012 | ||||||||||
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | ||||||||||
Citation | Physical Review B (Condensed Matter and Materials Physics), 2012, v. 85 n. 22, article no. 224110 How to Cite? | ||||||||||
Abstract | High-κ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD), for structure evolution, and quantum mechanical first-principles density function theory (DFT), for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-κ metal oxides Hf 1-xZr xO 2 with different values of the concentration x are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data and are very close to the dielectric constants of their cubic form. © 2012 American Physical Society. | ||||||||||
Persistent Identifier | http://hdl.handle.net/10722/152809 | ||||||||||
ISSN | 2014 Impact Factor: 3.736 | ||||||||||
ISI Accession Number ID |
Funding Information: We would like to thank H. Z. Shao of Fudan University, C. Yin of DEC, and J. N. Zhuang of the University of Hong Kong for useful discussions. This work is supported by the University Grant Council (Contract No. AoE/P-04/08) of the Government of HKSAR, the Small Project Funding of HKU (YW), NSERC of Canada (HG), and CIFAR (HG). | ||||||||||
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Grants |
DC Field | Value | Language |
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dc.contributor.author | Wang, Y | en_HK |
dc.contributor.author | Zahid, F | en_HK |
dc.contributor.author | Wang, J | en_HK |
dc.contributor.author | Guo, H | en_HK |
dc.date.accessioned | 2012-07-16T09:49:11Z | - |
dc.date.available | 2012-07-16T09:49:11Z | - |
dc.date.issued | 2012 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2012, v. 85 n. 22, article no. 224110 | - |
dc.identifier.issn | 1098-0121 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/152809 | - |
dc.description.abstract | High-κ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD), for structure evolution, and quantum mechanical first-principles density function theory (DFT), for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-κ metal oxides Hf 1-xZr xO 2 with different values of the concentration x are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data and are very close to the dielectric constants of their cubic form. © 2012 American Physical Society. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | - |
dc.rights | Copyright 2012 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.85.224110 | - |
dc.title | Structure and dielectric properties of amorphous high-κ oxides: HfO 2, ZrO 2, and their alloys | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Zahid, F: fzahid@hku.hk | en_HK |
dc.identifier.authority | Zahid, F=rp01472 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1103/PhysRevB.85.224110 | en_HK |
dc.identifier.scopus | eid_2-s2.0-84862687145 | en_HK |
dc.identifier.hkuros | 200972 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-84862687145&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 85 | en_HK |
dc.identifier.issue | 22 | en_HK |
dc.identifier.spage | article no. 224110 | - |
dc.identifier.epage | article no. 224110 | - |
dc.identifier.isi | WOS:000305531900003 | - |
dc.publisher.place | United States | en_HK |
dc.relation.project | Theory, Modeling, and Simulation of Emerging Electronics | - |
dc.identifier.scopusauthorid | Wang, Y=54975203200 | en_HK |
dc.identifier.scopusauthorid | Zahid, F=8568996000 | en_HK |
dc.identifier.scopusauthorid | Wang, J=55223107000 | en_HK |
dc.identifier.scopusauthorid | Guo, H=16236337600 | en_HK |
dc.identifier.issnl | 1098-0121 | - |