Article: Structure and dielectric properties of amorphous high-κ oxides: HfO 2, ZrO 2, and their alloys

File Download
  • No File Attached
Links for fulltext
(May Require Subscription)
Supplementary
  • Basic View
  • Metadata View
  • XML View
TitleStructure and dielectric properties of amorphous high-κ oxides: HfO 2, ZrO 2, and their alloys
AuthorsWang, Y1
Zahid, F1
Wang, J1
Guo, H1 2
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
CitationPhysical Review B - Condensed Matter And Materials Physics, 2012, v. 85 n. 22 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.85.224110
AbstractHigh-κ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD), for structure evolution, and quantum mechanical first-principles density function theory (DFT), for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-κ metal oxides Hf 1-xZr xO 2 with different values of the concentration x are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data and are very close to the dielectric constants of their cubic form. © 2012 American Physical Society.
ISSN1098-0121
2011 Impact Factor: 3.691
2011 SCImago Journal Rankings: 0.268
DOIhttp://dx.doi.org/10.1103/PhysRevB.85.224110
ISI Accession Number IDWOS:000305531900003
Funding AgencyGrant Number
University Grant Council of the Government of HKSARAoE/P-04/08
HKU
NSERC of Canada
CIFAR
Funding Information:

We would like to thank H. Z. Shao of Fudan University, C. Yin of DEC, and J. N. Zhuang of the University of Hong Kong for useful discussions. This work is supported by the University Grant Council (Contract No. AoE/P-04/08) of the Government of HKSAR, the Small Project Funding of HKU (YW), NSERC of Canada (HG), and CIFAR (HG).

ReferencesReferences in Scopus
GrantsTheory, Modeling, and Simulation of Emerging Electronics
DC Field
Value
dc.contributor.authorWang, Y
dc.contributor.authorZahid, F
dc.contributor.authorWang, J
dc.contributor.authorGuo, H
dc.date.accessioned2012-07-16T09:49:11Z
dc.date.available2012-07-16T09:49:11Z
dc.date.issued2012
dc.description.abstractHigh-κ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD), for structure evolution, and quantum mechanical first-principles density function theory (DFT), for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-κ metal oxides Hf 1-xZr xO 2 with different values of the concentration x are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data and are very close to the dielectric constants of their cubic form. © 2012 American Physical Society.
dc.description.grantTheory, Modeling, and Simulation of Emerging Electronics
dc.description.grantcode101181
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2012, v. 85 n. 22 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.85.224110
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.85.224110
dc.identifier.hkuros200972
dc.identifier.isiWOS:000305531900003
Funding AgencyGrant Number
University Grant Council of the Government of HKSARAoE/P-04/08
HKU
NSERC of Canada
CIFAR
Funding Information:

We would like to thank H. Z. Shao of Fudan University, C. Yin of DEC, and J. N. Zhuang of the University of Hong Kong for useful discussions. This work is supported by the University Grant Council (Contract No. AoE/P-04/08) of the Government of HKSAR, the Small Project Funding of HKU (YW), NSERC of Canada (HG), and CIFAR (HG).

dc.identifier.issn1098-0121
2011 Impact Factor: 3.691
2011 SCImago Journal Rankings: 0.268
dc.identifier.issue22
dc.identifier.scopuseid_2-s2.0-84862687145
dc.identifier.urihttp://hdl.handle.net/10722/152809
dc.identifier.volume85
dc.languageeng
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
dc.publisher.placeUnited States
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
dc.relation.referencesReferences in Scopus
dc.titleStructure and dielectric properties of amorphous high-κ oxides: HfO 2, ZrO 2, and their alloys
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. McGill University