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Conference Paper: Electrostatically driven touch-mode poly-SiC micro speaker

TitleElectrostatically driven touch-mode poly-SiC micro speaker
Authors
Roberts, RCDu, JOng, AKLi, DZorman, CATien, NC
Issue Date2007
Citation
Proceedings Of Ieee Sensors, 2007, p. 284-287 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSENS.2007.4388392
AbstractThis paper presents an electrostatically driven microspeaker utilizing a SiC membrane operating in the touch-mode configuration. The device is formed using conventional wafer bonding to hermetically seal a low-stress, heavily-doped polycrystalline 3C-SiC (poly-SiC) membrane to a bulk micromachined silicon back-plate containing a thin oxide insulating layer. The bonding process is done in high vacuum, causing the poly-SiC membrane to flex down into contact with the back-plate when exposed to atmospheric pressure. Sound Pressure Level (SPL) measurements were recorded for a device with a poly-SiC membrane thickness of 1μm, a diameter of 800μm, and a diaphragm/back-plate spacing of 8μm. At a distance of 10mm, a maximum SPL of 73 dB was found at a frequency of 16.59 kHz. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/149023
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorRoberts, RCen_HK
dc.contributor.authorDu, Jen_HK
dc.contributor.authorOng, AKen_HK
dc.contributor.authorLi, Den_HK
dc.contributor.authorZorman, CAen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:17:56Z-
dc.date.available2012-06-20T06:17:56Z-
dc.date.issued2007en_HK
dc.identifier.citationProceedings Of Ieee Sensors, 2007, p. 284-287en_US
dc.identifier.urihttp://hdl.handle.net/10722/149023-
dc.description.abstractThis paper presents an electrostatically driven microspeaker utilizing a SiC membrane operating in the touch-mode configuration. The device is formed using conventional wafer bonding to hermetically seal a low-stress, heavily-doped polycrystalline 3C-SiC (poly-SiC) membrane to a bulk micromachined silicon back-plate containing a thin oxide insulating layer. The bonding process is done in high vacuum, causing the poly-SiC membrane to flex down into contact with the back-plate when exposed to atmospheric pressure. Sound Pressure Level (SPL) measurements were recorded for a device with a poly-SiC membrane thickness of 1μm, a diameter of 800μm, and a diaphragm/back-plate spacing of 8μm. At a distance of 10mm, a maximum SPL of 73 dB was found at a frequency of 16.59 kHz. © 2007 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofProceedings of IEEE Sensorsen_HK
dc.titleElectrostatically driven touch-mode poly-SiC micro speakeren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailRoberts, RC: rcr8@hku.hken_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityRoberts, RC=rp01738en_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/ICSENS.2007.4388392en_HK
dc.identifier.scopuseid_2-s2.0-48349102869en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-48349102869&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage284en_HK
dc.identifier.epage287en_HK
dc.identifier.scopusauthoridRoberts, RC=24466830100en_HK
dc.identifier.scopusauthoridDu, J=7402575307en_HK
dc.identifier.scopusauthoridOng, AK=15770223700en_HK
dc.identifier.scopusauthoridLi, D=24484642700en_HK
dc.identifier.scopusauthoridZorman, CA=7005077073en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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