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Conference Paper: Electrical breakdown response for multiple-gap MEMS structures

TitleElectrical breakdown response for multiple-gap MEMS structures
Authors
KeywordsElectrical breakdown
MEMS microswitch
Paschen curve
Issue Date2006
Citation
Ieee International Reliability Physics Symposium Proceedings, 2006, p. 421-426 How to Cite?
AbstractWe characterize the electrical breakdown response for planar structures, fabricated using microelectromechanical systems (MEMS) methods and materials, to enable design of high voltage microswitches. Electrode configurations that use multiple air gaps provide voltage division between electrodes and allow large voltage holdoff values in microswitch contact configurations with short actuation distances. The comparatively large benefits gained from very small air gaps (4 to 7 um) help to enable high holdoff values, particularly when multiple gaps in this range are added in series. The capacitive effect in multiple gaps can lower breakdown levels, but sufficient electrode spacing reduces this effect. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/149019
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorStrong, FWen_HK
dc.contributor.authorSkinner, JLen_HK
dc.contributor.authorTalin, AAen_HK
dc.contributor.authorDentinger, PMen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:17:54Z-
dc.date.available2012-06-20T06:17:54Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee International Reliability Physics Symposium Proceedings, 2006, p. 421-426en_US
dc.identifier.issn1541-7026en_HK
dc.identifier.urihttp://hdl.handle.net/10722/149019-
dc.description.abstractWe characterize the electrical breakdown response for planar structures, fabricated using microelectromechanical systems (MEMS) methods and materials, to enable design of high voltage microswitches. Electrode configurations that use multiple air gaps provide voltage division between electrodes and allow large voltage holdoff values in microswitch contact configurations with short actuation distances. The comparatively large benefits gained from very small air gaps (4 to 7 um) help to enable high holdoff values, particularly when multiple gaps in this range are added in series. The capacitive effect in multiple gaps can lower breakdown levels, but sufficient electrode spacing reduces this effect. © 2006 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofIEEE International Reliability Physics Symposium Proceedingsen_HK
dc.subjectElectrical breakdownen_HK
dc.subjectMEMS microswitchen_HK
dc.subjectPaschen curveen_HK
dc.titleElectrical breakdown response for multiple-gap MEMS structuresen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/RELPHY.2006.251255en_HK
dc.identifier.scopuseid_2-s2.0-34250769489en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34250769489&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage421en_HK
dc.identifier.epage426en_HK
dc.identifier.scopusauthoridStrong, FW=13007548000en_HK
dc.identifier.scopusauthoridSkinner, JL=12764588800en_HK
dc.identifier.scopusauthoridTalin, AA=6603823265en_HK
dc.identifier.scopusauthoridDentinger, PM=7004230631en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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