File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Electromagnetically shielded high-Q CMOS-compatible copper inductors

TitleElectromagnetically shielded high-Q CMOS-compatible copper inductors
Authors
Jiang, HJerLiang Andrew YehWang, YTien, N
Issue Date2000
Citation
Digest Of Technical Papers - Ieee International Solid-State Circuits Conference, 2000, p. 330-331 How to Cite?
AbstractAn on-chip suspended high electromagnetically shielded spiral inductor was fabricated using silicon micromachining techniques. The inductor comprises of a polysilicon spiral electrolessly plated with copper. Silicon nitride layer was deposited as an isolation layer on the inductor and sacrificial oxide blocks were created in the silicon substrate. The structure was released in hydrofluoric acid and electroless copper plating was performed.
Persistent Identifierhttp://hdl.handle.net/10722/148996
ISSN
0193-6530
2020 SCImago Journal Rankings: 3.447
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hen_HK
dc.contributor.authorJerLiang Andrew Yehen_HK
dc.contributor.authorWang, Yen_HK
dc.contributor.authorTien, Nen_HK
dc.date.accessioned2012-06-20T06:17:45Z-
dc.date.available2012-06-20T06:17:45Z-
dc.date.issued2000en_HK
dc.identifier.citationDigest Of Technical Papers - Ieee International Solid-State Circuits Conference, 2000, p. 330-331en_US
dc.identifier.issn0193-6530en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148996-
dc.description.abstractAn on-chip suspended high electromagnetically shielded spiral inductor was fabricated using silicon micromachining techniques. The inductor comprises of a polysilicon spiral electrolessly plated with copper. Silicon nitride layer was deposited as an isolation layer on the inductor and sacrificial oxide blocks were created in the silicon substrate. The structure was released in hydrofluoric acid and electroless copper plating was performed.en_HK
dc.languageengen_US
dc.relation.ispartofDigest of Technical Papers - IEEE International Solid-State Circuits Conferenceen_HK
dc.titleElectromagnetically shielded high-Q CMOS-compatible copper inductorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTien, N: nctien@hku.hken_HK
dc.identifier.authorityTien, N=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034428326en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034428326&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage330en_HK
dc.identifier.epage331en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJiang, H=36120322000en_HK
dc.identifier.scopusauthoridJerLiang Andrew Yeh=7409531654en_HK
dc.identifier.scopusauthoridWang, Y=7601495931en_HK
dc.identifier.scopusauthoridTien, N=7006532826en_HK
dc.identifier.issnl0193-6530-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats