File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: New fabrication method for high-Q on-chip spiral inductor

TitleNew fabrication method for high-Q on-chip spiral inductor
Authors
Issue Date1999
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3876, p. 153-159 How to Cite?
AbstractCurrent silicon on-chip inductors have the problems of low quality factors (Q), low self-resonant frequencies, poor electromagnetic isolation and lack of a good radio-frequency (RF) ground plane. To address these issues, we present a new method to fabricate an on-chip copper spiral inductor. The basic structure of the inductor consists of a spiral polysilicon coil suspended over a cavity etched into the silicon substrate. Copper (Cu) is electrolessly deposited onto the polysilicon spiral in order to obtain high conductivity. The formation of the suspended coil is realized by first creating a silicon oxide block embedded in the silicon substrate, then fabricating on the oxide the coil by polysilicon surface micromachining, and in the end removing the embedded oxide by hydrofluoric acid (HF). The benefit of using a suspended spiral structure is two-folded: first, the electrical and magnetic coupling between the inductor and the substrate is reduced dramatically, thus decreasing the substrate loss, and second, by reducing the parasitic capacitance between the inductor and the substrate, the self-resonance of the inductor at an undesirably low frequency can be avoided. The metallized bottom and side-walls of the cavity under the inductor serve both as an electromagnetic shield for isolation and as an RF ground plane. Initial experimental results show that the maximum Q-factor can be as high as 26 for a 2.14nH inductor. The self-resonant frequency is measured to be 10.3GHz.
Persistent Identifierhttp://hdl.handle.net/10722/148994
ISSN

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hongruien_HK
dc.contributor.authorYeh, JerLiang Andrewen_HK
dc.contributor.authorTien, Norman Cen_HK
dc.date.accessioned2012-06-20T06:17:45Z-
dc.date.available2012-06-20T06:17:45Z-
dc.date.issued1999en_HK
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3876, p. 153-159en_US
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/148994-
dc.description.abstractCurrent silicon on-chip inductors have the problems of low quality factors (Q), low self-resonant frequencies, poor electromagnetic isolation and lack of a good radio-frequency (RF) ground plane. To address these issues, we present a new method to fabricate an on-chip copper spiral inductor. The basic structure of the inductor consists of a spiral polysilicon coil suspended over a cavity etched into the silicon substrate. Copper (Cu) is electrolessly deposited onto the polysilicon spiral in order to obtain high conductivity. The formation of the suspended coil is realized by first creating a silicon oxide block embedded in the silicon substrate, then fabricating on the oxide the coil by polysilicon surface micromachining, and in the end removing the embedded oxide by hydrofluoric acid (HF). The benefit of using a suspended spiral structure is two-folded: first, the electrical and magnetic coupling between the inductor and the substrate is reduced dramatically, thus decreasing the substrate loss, and second, by reducing the parasitic capacitance between the inductor and the substrate, the self-resonance of the inductor at an undesirably low frequency can be avoided. The metallized bottom and side-walls of the cavity under the inductor serve both as an electromagnetic shield for isolation and as an RF ground plane. Initial experimental results show that the maximum Q-factor can be as high as 26 for a 2.14nH inductor. The self-resonant frequency is measured to be 10.3GHz.en_HK
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.titleNew fabrication method for high-Q on-chip spiral inductoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTien, Norman C: nctien@hku.hken_HK
dc.identifier.authorityTien, Norman C=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0033356218en_HK
dc.identifier.volume3876en_HK
dc.identifier.spage153en_HK
dc.identifier.epage159en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJiang, Hongrui=36120322000en_HK
dc.identifier.scopusauthoridYeh, JerLiang Andrew=7201895883en_HK
dc.identifier.scopusauthoridTien, Norman C=7006532826en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats