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Article: A highly reliable lateral MEMS switch utilizing undoped polysilicon as isolation material

TitleA highly reliable lateral MEMS switch utilizing undoped polysilicon as isolation material
Authors
KeywordsElectrical isolation
Isolation structure
Mechanical coupling
Microrelay
Radio frequency (RF) switch
Issue Date2007
Citation
Journal Of Microelectromechanical Systems, 2007, v. 16 n. 5, p. 1173-1184 How to Cite?
AbstractThe lateral actuated switch requires an isolation structure to provide mechanical coupling and electrical isolation between the actuator and the contacts. This isolation structure usually imposes extra difficulty on the fabrication process. In previous reports, we demonstrated a thermal actuated lateral switch, where the nitride isolation structure was a weak point, leading to reliability problems. In this paper, we developed a modified switch utilizing undoped polysilicon as the isolation material. The undoped-polysilicon isolation structure requires only one extra step of sheltered implantation, and it provides robust mechanical connection. A 20- μm-long undoped-polysilicon isolation structure has a current leakage of less than 2 nA under a 15-V operation voltage. The proposed switch works under a 12-V driving voltage with 60-mW input power. The time response is measured to be 130 μs, and a maximum operation frequency of 4.5 kHz is reached. An on-state insertion loss of -0.41 dB at 20 GHz and an off-state isolation of -20 dB at 20 GHz have been achieved on the normal low-resistivity silicon substrate. The undoped-polysilicon isolation method can be used in other surface-micromachined lateral switches as well. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/148953
ISSN
2015 Impact Factor: 1.939
2015 SCImago Journal Rankings: 0.847
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShi, Wen_HK
dc.contributor.authorTien, NCen_HK
dc.contributor.authorLi, Zen_HK
dc.date.accessioned2012-06-20T06:17:02Z-
dc.date.available2012-06-20T06:17:02Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Microelectromechanical Systems, 2007, v. 16 n. 5, p. 1173-1184en_HK
dc.identifier.issn1057-7157en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148953-
dc.description.abstractThe lateral actuated switch requires an isolation structure to provide mechanical coupling and electrical isolation between the actuator and the contacts. This isolation structure usually imposes extra difficulty on the fabrication process. In previous reports, we demonstrated a thermal actuated lateral switch, where the nitride isolation structure was a weak point, leading to reliability problems. In this paper, we developed a modified switch utilizing undoped polysilicon as the isolation material. The undoped-polysilicon isolation structure requires only one extra step of sheltered implantation, and it provides robust mechanical connection. A 20- μm-long undoped-polysilicon isolation structure has a current leakage of less than 2 nA under a 15-V operation voltage. The proposed switch works under a 12-V driving voltage with 60-mW input power. The time response is measured to be 130 μs, and a maximum operation frequency of 4.5 kHz is reached. An on-state insertion loss of -0.41 dB at 20 GHz and an off-state isolation of -20 dB at 20 GHz have been achieved on the normal low-resistivity silicon substrate. The undoped-polysilicon isolation method can be used in other surface-micromachined lateral switches as well. © 2007 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofJournal of Microelectromechanical Systemsen_HK
dc.subjectElectrical isolationen_HK
dc.subjectIsolation structureen_HK
dc.subjectMechanical couplingen_HK
dc.subjectMicrorelayen_HK
dc.subjectRadio frequency (RF) switchen_HK
dc.titleA highly reliable lateral MEMS switch utilizing undoped polysilicon as isolation materialen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/JMEMS.2007.901121en_HK
dc.identifier.scopuseid_2-s2.0-34948885124en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34948885124&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue5en_HK
dc.identifier.spage1173en_HK
dc.identifier.epage1184en_HK
dc.identifier.isiWOS:000250068400021-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShi, W=8946683600en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.scopusauthoridLi, Z=24306828000en_HK

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