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Article: A low-voltage lateral MEMS switch with high RF performance

TitleA low-voltage lateral MEMS switch with high RF performance
Authors
KeywordsElectrothermal actuator
Lateral contact
Low voltage
Microrelay
Radio frequency (RF) switch
Issue Date2004
Citation
Journal Of Microelectromechanical Systems, 2004, v. 13 n. 6, p. 902-911 How to Cite?
AbstractMEMS switches are one of the most promising future micromachined products that have attracted numerous research efforts in recent years. The majority of MEMS switches reported to date employ electrostatic actuation, which requires large actuation voltages. Few are lateral relays and those often require nonstandard post process, and none of them is intended for high-frequency applications. We have developed an electrothermally actuated lateral-contact microrelay for RF applications. It is designed and fabricated on both low-resistivity and high-resistivity silicon substrate using surface micromachining techniques. The microrelay utilizing the parallel six-beam actuator requires an actuation voltage of 2.5-3.5 V. Time response is measured to be 300 μs and maximum operating frequency is 2.1 kHz. The RF signal line has a current handling capability of approximately 50 mA. The microrelay's power consumption is in the range of 60-100 mW. The lateral contact mechanism of the microrelay provides a high RF performance. The microrelay has an off-state isolation of -20 dB at 40 GHz and an insertion loss of -0.1 dB up to 50 GHz. The simplicity of this 4-mask fabrication process enables the possibility of integrating the microrelay with other passive RF MEMS components. © 2004 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/148946
ISSN
2015 Impact Factor: 1.939
2015 SCImago Journal Rankings: 0.847
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Yen_HK
dc.contributor.authorLi, Zen_HK
dc.contributor.authorMcCormick, DTen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:16:58Z-
dc.date.available2012-06-20T06:16:58Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Microelectromechanical Systems, 2004, v. 13 n. 6, p. 902-911en_HK
dc.identifier.issn1057-7157en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148946-
dc.description.abstractMEMS switches are one of the most promising future micromachined products that have attracted numerous research efforts in recent years. The majority of MEMS switches reported to date employ electrostatic actuation, which requires large actuation voltages. Few are lateral relays and those often require nonstandard post process, and none of them is intended for high-frequency applications. We have developed an electrothermally actuated lateral-contact microrelay for RF applications. It is designed and fabricated on both low-resistivity and high-resistivity silicon substrate using surface micromachining techniques. The microrelay utilizing the parallel six-beam actuator requires an actuation voltage of 2.5-3.5 V. Time response is measured to be 300 μs and maximum operating frequency is 2.1 kHz. The RF signal line has a current handling capability of approximately 50 mA. The microrelay's power consumption is in the range of 60-100 mW. The lateral contact mechanism of the microrelay provides a high RF performance. The microrelay has an off-state isolation of -20 dB at 40 GHz and an insertion loss of -0.1 dB up to 50 GHz. The simplicity of this 4-mask fabrication process enables the possibility of integrating the microrelay with other passive RF MEMS components. © 2004 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofJournal of Microelectromechanical Systemsen_HK
dc.subjectElectrothermal actuatoren_HK
dc.subjectLateral contacten_HK
dc.subjectLow voltageen_HK
dc.subjectMicrorelayen_HK
dc.subjectRadio frequency (RF) switchen_HK
dc.titleA low-voltage lateral MEMS switch with high RF performanceen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/JMEMS.2004.838395en_HK
dc.identifier.scopuseid_2-s2.0-10944272665en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10944272665&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume13en_HK
dc.identifier.issue6en_HK
dc.identifier.spage902en_HK
dc.identifier.epage911en_HK
dc.identifier.isiWOS:000225515100003-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, Y=7601495931en_HK
dc.identifier.scopusauthoridLi, Z=24306828000en_HK
dc.identifier.scopusauthoridMcCormick, DT=7202521902en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.citeulike2995282-

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