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Article: Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate

TitleFabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate
Authors
Issue Date2002
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/jmm
Citation
Journal Of Micromechanics And Microengineering, 2002, v. 12 n. 1, p. 87-95 How to Cite?
AbstractA silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and optional planarization. Design issues and parameters for the creation of such blocks are discussed. The selectively defined silicon dioxide blocks allow the integration of silicon surface and bulk micromachining and thick large-area isolation regions for integrated circuits. The performance enhancement that this approach enables is exemplified in the fabrication of an on-chip tunable capacitor and a monolithic transformer on 20-μm-deep silicon dioxide blocks.
Persistent Identifierhttp://hdl.handle.net/10722/148943
ISSN
2015 Impact Factor: 1.768
2015 SCImago Journal Rankings: 0.674
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hen_HK
dc.contributor.authorYoo, Ken_HK
dc.contributor.authorYeh, JLAen_HK
dc.contributor.authorLi, Zen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:16:58Z-
dc.date.available2012-06-20T06:16:58Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of Micromechanics And Microengineering, 2002, v. 12 n. 1, p. 87-95en_HK
dc.identifier.issn0960-1317en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148943-
dc.description.abstractA silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and optional planarization. Design issues and parameters for the creation of such blocks are discussed. The selectively defined silicon dioxide blocks allow the integration of silicon surface and bulk micromachining and thick large-area isolation regions for integrated circuits. The performance enhancement that this approach enables is exemplified in the fabrication of an on-chip tunable capacitor and a monolithic transformer on 20-μm-deep silicon dioxide blocks.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/jmmen_HK
dc.relation.ispartofJournal of Micromechanics and Microengineeringen_HK
dc.titleFabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrateen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0960-1317/12/1/314en_HK
dc.identifier.scopuseid_2-s2.0-0036155728en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036155728&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue1en_HK
dc.identifier.spage87en_HK
dc.identifier.epage95en_HK
dc.identifier.isiWOS:000173628400014-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridJiang, H=36120322000en_HK
dc.identifier.scopusauthoridYoo, K=7202592782en_HK
dc.identifier.scopusauthoridYeh, JLA=7201895883en_HK
dc.identifier.scopusauthoridLi, Z=24306828000en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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