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Article: On-chip spiral inductors suspended over deep copper-lined cavities

TitleOn-chip spiral inductors suspended over deep copper-lined cavities
Authors
KeywordsElectroless copper plating
Electromagnetic shielding
Integration of surface and bulk micromachining
Microelectrical mechanical system (MEMS)
On-chip inductor
Q factor
Radio-frequency (RF) device
Silicon micromachining
Suspended coil
Issue Date2000
Citation
Ieee Transactions On Microwave Theory And Techniques, 2000, v. 48 n. 12, p. 2415-2423 How to Cite?
AbstractA silicon niicrornachining method has been developed to fabricate on-chip high-performance suspended spiral inductors. The spiral structure of an inductor was formed with polysilicon and was suspended over a 30-/j,m-deep cavity in the silicon substrate beneath. Copper (Cu) was electrolessly plated onto the polysilicon spiral to achieve low resistance. The Cu plating process also metallized the inner surfaces of the cavity, forming both a good radio-frequency (RF) ground and an electromagnetic shield. High quality factors (Qs) over 30 and self-resonant frequencies higher than 10 GHz have been achieved. Study of the mechanical properties of the suspended inductors indicates that they can withstand large shock and vibration. Simulation predicts a reduction of an order of magnitude in the mutual inductance of two adjacent inductors with the 30-/j,m-deep Cu-lined cavity from that with silicon as the substrate. This indicates very small crosstalk between the inductors due to the shielding effect of the cavities. © 2000 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/148942
ISSN
2015 Impact Factor: 2.284
2015 SCImago Journal Rankings: 1.346
References

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hen_HK
dc.contributor.authorWang, Yen_HK
dc.contributor.authorYeh, JLAen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:16:57Z-
dc.date.available2012-06-20T06:16:57Z-
dc.date.issued2000en_HK
dc.identifier.citationIeee Transactions On Microwave Theory And Techniques, 2000, v. 48 n. 12, p. 2415-2423en_HK
dc.identifier.issn0018-9480en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148942-
dc.description.abstractA silicon niicrornachining method has been developed to fabricate on-chip high-performance suspended spiral inductors. The spiral structure of an inductor was formed with polysilicon and was suspended over a 30-/j,m-deep cavity in the silicon substrate beneath. Copper (Cu) was electrolessly plated onto the polysilicon spiral to achieve low resistance. The Cu plating process also metallized the inner surfaces of the cavity, forming both a good radio-frequency (RF) ground and an electromagnetic shield. High quality factors (Qs) over 30 and self-resonant frequencies higher than 10 GHz have been achieved. Study of the mechanical properties of the suspended inductors indicates that they can withstand large shock and vibration. Simulation predicts a reduction of an order of magnitude in the mutual inductance of two adjacent inductors with the 30-/j,m-deep Cu-lined cavity from that with silicon as the substrate. This indicates very small crosstalk between the inductors due to the shielding effect of the cavities. © 2000 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Microwave Theory and Techniquesen_HK
dc.subjectElectroless copper platingen_HK
dc.subjectElectromagnetic shieldingen_HK
dc.subjectIntegration of surface and bulk micromachiningen_HK
dc.subjectMicroelectrical mechanical system (MEMS)en_HK
dc.subjectOn-chip inductoren_HK
dc.subjectQ factoren_HK
dc.subjectRadio-frequency (RF) deviceen_HK
dc.subjectSilicon micromachiningen_HK
dc.subjectSuspended coilen_HK
dc.titleOn-chip spiral inductors suspended over deep copper-lined cavitiesen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/22.898992en_HK
dc.identifier.scopuseid_2-s2.0-0034427508en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034427508&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue12en_HK
dc.identifier.spage2415en_HK
dc.identifier.epage2423en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJiang, H=36120322000en_HK
dc.identifier.scopusauthoridWang, Y=7601495931en_HK
dc.identifier.scopusauthoridYeh, JLA=7201895883en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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