File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Copper-encapsulated silicon micromachined structures

TitleCopper-encapsulated silicon micromachined structures
Authors
Issue Date2000
Citation
Journal Of Microelectromechanical Systems, 2000, v. 9 n. 3, p. 281-287 How to Cite?
AbstractSelective copper encapsulation on silicon has been used to fabricate micromachined devices such as inductors with quality factors over 30 at frequencies above 5 GHz. The devices are fabricated using either polysilicon surface micromachining, or integrated polysilicon and deep reactive ion etching bulk silicon micromachining. Their exposed silicon surfaces are selectively activated by palladium activation, which allows the subsequent copper deposition on the activated silicon surfaces only. This silicon-encapsulated-with-copper technique takes advantage of both the excellent mechanical properties of silicon (to maintain structural integrity), and the high conductivity of copper (for electrical signal transmission). Furthermore, the process not only minimizes interfacial forces typical of physical metal deposition on silicon, but also balances the forces by metal encapsulation on all sides of the silicon structures.
Persistent Identifierhttp://hdl.handle.net/10722/148940
ISSN
2015 Impact Factor: 1.939
2015 SCImago Journal Rankings: 0.847
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYeh, JLAen_HK
dc.contributor.authorJiang, Hen_HK
dc.contributor.authorNeves, HPen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:16:56Z-
dc.date.available2012-06-20T06:16:56Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal Of Microelectromechanical Systems, 2000, v. 9 n. 3, p. 281-287en_HK
dc.identifier.issn1057-7157en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148940-
dc.description.abstractSelective copper encapsulation on silicon has been used to fabricate micromachined devices such as inductors with quality factors over 30 at frequencies above 5 GHz. The devices are fabricated using either polysilicon surface micromachining, or integrated polysilicon and deep reactive ion etching bulk silicon micromachining. Their exposed silicon surfaces are selectively activated by palladium activation, which allows the subsequent copper deposition on the activated silicon surfaces only. This silicon-encapsulated-with-copper technique takes advantage of both the excellent mechanical properties of silicon (to maintain structural integrity), and the high conductivity of copper (for electrical signal transmission). Furthermore, the process not only minimizes interfacial forces typical of physical metal deposition on silicon, but also balances the forces by metal encapsulation on all sides of the silicon structures.en_HK
dc.languageengen_US
dc.relation.ispartofJournal of Microelectromechanical Systemsen_HK
dc.titleCopper-encapsulated silicon micromachined structuresen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/84.870052en_HK
dc.identifier.scopuseid_2-s2.0-0034271497en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034271497&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume9en_HK
dc.identifier.issue3en_HK
dc.identifier.spage281en_HK
dc.identifier.epage287en_HK
dc.identifier.isiWOS:000089478700001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYeh, JLA=7201895883en_HK
dc.identifier.scopusauthoridJiang, H=36120322000en_HK
dc.identifier.scopusauthoridNeves, HP=6603958920en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats