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Article: Surface adhesion reduction in silicon microstructures using femtosecond laser pulses

TitleSurface adhesion reduction in silicon microstructures using femtosecond laser pulses
Authors
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 68 n. 2, p. 197-199 How to Cite?
AbstractA reduction of the adhesion between polysilicon surface-micromachined structures and its silicon substrate using ultrashort pulse laser irradiation has been demonstrated. Polysilicon cantilevers, which adhered to the silicon substrate after final rinse and dry, were freed after irradiation by a 800 nm wavelength laser with pulse duration of 150 fs (full width at half-maximum) and fluences up to 40 mJ/cm2. Increasing the pulse widths to 2.7 ps resulted in significantly fewer freed cantilevers indicating that the process depends heavily on the presence of high-temperature carriers in the silicon. Adhesion reduction has been observed from exposure to a single pulse which results in minimal lattice temperature increase. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/148932
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTien, NCen_HK
dc.contributor.authorJeong, Sen_HK
dc.contributor.authorPhinney, LMen_HK
dc.contributor.authorFushinobu, Ken_HK
dc.contributor.authorBokor, Jen_HK
dc.date.accessioned2012-06-20T06:16:54Z-
dc.date.available2012-06-20T06:16:54Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 68 n. 2, p. 197-199en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148932-
dc.description.abstractA reduction of the adhesion between polysilicon surface-micromachined structures and its silicon substrate using ultrashort pulse laser irradiation has been demonstrated. Polysilicon cantilevers, which adhered to the silicon substrate after final rinse and dry, were freed after irradiation by a 800 nm wavelength laser with pulse duration of 150 fs (full width at half-maximum) and fluences up to 40 mJ/cm2. Increasing the pulse widths to 2.7 ps resulted in significantly fewer freed cantilevers indicating that the process depends heavily on the presence of high-temperature carriers in the silicon. Adhesion reduction has been observed from exposure to a single pulse which results in minimal lattice temperature increase. © 1996 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.titleSurface adhesion reduction in silicon microstructures using femtosecond laser pulsesen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.116458en_HK
dc.identifier.scopuseid_2-s2.0-0030574515en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030574515&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume68en_HK
dc.identifier.issue2en_HK
dc.identifier.spage197en_HK
dc.identifier.epage199en_HK
dc.identifier.isiWOS:A1996TN79600020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.scopusauthoridJeong, S=7402425370en_HK
dc.identifier.scopusauthoridPhinney, LM=7004124374en_HK
dc.identifier.scopusauthoridFushinobu, K=7004131266en_HK
dc.identifier.scopusauthoridBokor, J=7102304219en_HK

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