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Article: Ultrashort-pulse laser heating of silicon to reduce microstructure adhesion

TitleUltrashort-pulse laser heating of silicon to reduce microstructure adhesion
Authors
Issue Date1996
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ijhmt
Citation
International Journal Of Heat And Mass Transfer, 1996, v. 39 n. 15, p. 3181-3186 How to Cite?
AbstractA technique to remove moisture from microelectronic devices and improve device yield in microelectromechanical systems by reducing microstructure surface adhesion is proposed. Ultrashort-pulse laser radiation is used to create excited carriers in, and consequently desorb water from, silicon microstructures. A theoretical model for ultrashort-pulse laser heating of silicon is presented. Calculated carrier temperatures show significant increases at short time scales, while the lattice temperatures remain almost constant, indicating the possibility for water desorption without significant device heating. A preliminary experiment confirming the feasibility of using the technique to decrease microstructure adhesion is discussed. Copyright © 1996 Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/148931
ISSN
2015 Impact Factor: 2.857
2015 SCImago Journal Rankings: 1.749
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFushinobu, Ken_HK
dc.contributor.authorPhinney, LMen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:16:53Z-
dc.date.available2012-06-20T06:16:53Z-
dc.date.issued1996en_HK
dc.identifier.citationInternational Journal Of Heat And Mass Transfer, 1996, v. 39 n. 15, p. 3181-3186en_HK
dc.identifier.issn0017-9310en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148931-
dc.description.abstractA technique to remove moisture from microelectronic devices and improve device yield in microelectromechanical systems by reducing microstructure surface adhesion is proposed. Ultrashort-pulse laser radiation is used to create excited carriers in, and consequently desorb water from, silicon microstructures. A theoretical model for ultrashort-pulse laser heating of silicon is presented. Calculated carrier temperatures show significant increases at short time scales, while the lattice temperatures remain almost constant, indicating the possibility for water desorption without significant device heating. A preliminary experiment confirming the feasibility of using the technique to decrease microstructure adhesion is discussed. Copyright © 1996 Elsevier Science Ltd.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ijhmten_HK
dc.relation.ispartofInternational Journal of Heat and Mass Transferen_HK
dc.titleUltrashort-pulse laser heating of silicon to reduce microstructure adhesionen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0017-9310(95)00399-1en_HK
dc.identifier.scopuseid_2-s2.0-0030268792en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030268792&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume39en_HK
dc.identifier.issue15en_HK
dc.identifier.spage3181en_HK
dc.identifier.epage3186en_HK
dc.identifier.isiWOS:A1996UW87500009-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridFushinobu, K=7004131266en_HK
dc.identifier.scopusauthoridPhinney, LM=7004124374en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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